APM4804KC-TR

APM4804K N-Channel Enhancement Mode MOSFET Features • 30V/8A, RDS(ON) = 17mΩ(typ.) @ VGS = 10V RDS(ON) = 22mΩ(typ.) @ VGS = 4.5V Pin Description D D D D • • • • S S S G Super High Density Cell Design Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant) SOP − 8 DD D D Applications G • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems SSS N-Channel MOSFET Ordering and Marking Information APM4804 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SO P-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM4804 K : APM4804 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw APM4804K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Parameter Drain-Source Voltage Gate-Source Voltage Continue Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=10V Rating 30 ±16 8 30 4 150 -55 to 150 2 0.8 62.5 Unit V A A °C W °C/W Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM4804K Min. 30 1 30 0.6 1 17 22 0.8 713 142 120 1.5 Ω pF 1.5 ±100 22 28 1.3 Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=250µA VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V VGS=10V, IDS=8A VGS=4.5V, IDS=5.6A ISD=4A, VGS=0V V µA V nA mΩ V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, VDS=15V, Frequency=1.0MHz VGS=0V, VDS=0V, f=1MHz Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 2 www.anpec.com.tw APM4804K Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM4804K Min. Typ. 3 Max. 6 32 44 30 20 Unit Dynamic Characteristics b td(ON) Turn-on Delay Time Tr td(OFF) Tf Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time b VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 17 24 16 15.7 ns Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Notes: Gate-Source Charge Gate-Drain Charge VDS=15V, VGS=10V, IDS=8A 1.9 2.2 nC a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 3 www.anpec.com.tw APM4804K Typical Characteristics o TA=25 C Power Dissipation 10 Drain Current 2.5 8 2.0 Ptot - Power (W) ID - Drain Current (A) 1.5 6 1.0 4 0.5 2 o 0.0 TA=25 C o TA=25 C, VG=10V 0 40 60 80 100 120 140 160 0 20 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance )L im it Duty = 0.5 0.2 0.1 ID - Drain Current (A) Rd 10 s( on 300µs 1ms 0.1 0.02 0.01 0.05 1 10ms 100ms 0.1 1s DC 0.01 Single Pulse Mounted on 1in pad o RθJA : 62.5 C/W 2 0.01 0.01 TA=25 C o 0.1 1 10 100 1E-3 1E-4 1E-3 0.01 0.1 1 10 30 VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 4 www.anpec.com.tw APM4804K Typical Characteristics (Cont.) Output Characteristics 30 27 24 VGS= 3,4,5,6,7,8,9,10V 28 30 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 26 24 VGS=4.5V 22 20 18 16 14 12 VGS=10V ID - Drain Current (A) 21 18 15 12 9 2.5V 2V 6 3 1.5V 0 0 2 4 6 8 10 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 30 1.4 Gate Threshold Voltage IDS=250µA 25 Normalized Threshold Voltage Tj=-55 C o 1.2 ID - Drain Current (A) 20 1.0 15 0.8 10 Tj=125 C 5 Tj=25 C 0 0.0 0.5 1.0 1.5 2.0 o o 0.6 2.5 3.0 3.5 0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 5 www.anpec.com.tw APM4804K Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = 10V 1.6 IDS = 8A 10 Tj=150 C o Source-Drain Diode Forward 30 Normalized On Resistance 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj=25 C: 17mΩ 0 25 50 75 100 125 150 o IS - Source Current (A) 1.4 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance 1400 Frequency=1MHz 1200 1000 800 Ciss 600 400 200 Crss 0 0 5 10 15 20 25 30 0 0 2 4 Coss 10 VDS=15V IDS=8A 8 Gate Charge VGS - Gate - source Voltage (V) C - Capacitance (pF) 6 4 2 6 8 10 12 14 16 VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 6 www.anpec.com.tw APM4804K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 7 www.anpec.com.tw APM4804K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 2 5 °C to Peak T im e Classificatin Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 8 www.anpec.com.tw APM4804K Classificatin Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – P ackage Peak Reflow Tem peratures 3 3 P ackage Thickness Volum e m m Volum e m m < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C Table 2. Pb-free Process – P ackage Classification Reflow Tem peratures 3 3 3 P ackage Thickness Volum e mm Volum e mm Volum e mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2 .5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device m anufacturer/supplier s hall a ssure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0 ° C. For exam ple 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape t P P1 D Po E F W Bo Ao Ko D1 Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 9 www.anpec.com.tw APM4804K Carrier Tape(Cont.) T2 J C A B T1 Application A 3 30 ± 1 B 6 2 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2 ± 0. 1 P 8± 0.1 Ko 2.1 ± 0.1 E 1.75±0.1 t .3 ±0.013 SOP-8 F 5.5 ± 1 1 .55 +0.1 1.55+ 0.25 4.0 ± 0.1 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 10 www.anpec.com.tw