APM4826KC-TRG

APM4826K N-Channel Enhancement Mode MOSFET Pin Description Features • D D 30V/11A, D D RDS(ON) =9.5mΩ(Typ.) @ VGS = 10V RDS(ON) =13.5mΩ(Typ.) @ VGS = 4.5V • • • • S S Super High Dense Cell Design S G Avalanche Rated SOP-8 Reliable and Rugged (5,6,7,8) DD D D Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G • Power Management in Notebook Computer, and DC-DC Converters in Networking Systems. S S S ( 1, 2, 3 ) N-Channel MOSFET Ordering and Marking Information Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APM4826 Assembly Material Handling Code Temperature Range Package Code APM4826 K : APM4826 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2009 1 www.anpec.com.tw APM4826K Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 IDa a IDM a IS b o 12 o 9.5 TA=25 C Continuous Drain Current (VGS=10V) TA=70 C b EAR TJ Diode Continuous Forward Current 3 A 22.5 A Repetitive Avalanche Energy (L=0.3mH) 75 mJ Maximum Junction Temperature 150 Storage Temperature Range PDa Maximum Power Dissipation RθJL A 40 TSTG RθJAa,c V 300µs Pulsed Drain Current (VGS=10V) Avalanche Current IAR Unit °C -55 to 150 TA=25°C 2.5 TA=70°C 1.6 Thermal Resistance-Junction to Ambient t ≤ 10s 50 °C/W Thermal Resistance-Junction to Lead Steady State 25 °C/W W Note a：Surface Mounted on 1in pad area, t ≤ 10sec. 2 o o Note b：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C). Note c：Maximum under Steady State conditions is 75 °C/W. Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Conditions APM4826K Min. Typ. Max. 30 - - - - 1 - - 30 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) e VGS=0V, IDS=250µA VDS=24V, VGS=0V TJ=85°C V µA Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 1.8 2.5 V Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=12A - 9.5 12 VGS=4.5V, IDS=9A - 13.5 18 ISD=3A, VGS=0V - 0.75 1.3 V - 18 - ns - 11 - nC Drain-Source On-state Resistance mΩ Diode Characteristics VSD e Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2009 ISD=12A, dlSD/dt=100A/µs 2 www.anpec.com.tw APM4826K Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics (TA = 25°C Unless Otherwise Noted) Test Conditions APM4826K Min. Typ. Max. 1 1.7 3 - 1150 1400 f RG Gate Resistance Ciss Input Capacitance VGS=0V,VDS=0V,F=1MHz - 170 - Crss VGS=0V, Output Capacitance VDS=15V, Frequency=1.0MHz Reverse Transfer Capacitance - 135 - td(ON) Turn-on Delay Time - 10 19 - 12 23 - 30 55 - 7 14 - 25.3 35 - 3.5 - - 6.5 - Coss tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg Unit Ω pF ns f Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V, VGS=10V, IDS=12A nC Note e : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note f : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2009 3 www.anpec.com.tw APM4826K Typical Operating Characteristics Power Dissipation Drain Current 14 2.5 12 ID - Drain Current (A) 3.0 Ptot - Power (W) 2.0 1.5 1.0 0.5 10 8 6 4 2 o 0.0 o TA=25 C 0 20 40 60 80 0 100 120 140 160 TA=25 C,VG=10V 0 20 o 40 60 80 100 120 140 160 o Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance 2 100 Duty = 0.5 Rd s(o n) ID - Drain Current (A) 10 Normalized Effective Transient Lim it 1 300µs 1ms 1 10ms 100ms 1s 0.1 DC 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 Mounted on 1in pad o RθJA : 50 C/W o TA=25 C 0.01 0.01 0.1 1 10 1E-3 1E-4 100 VDS - Drain-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2009 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4826K Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 50 27 VGS= 4.5,5,6,7,8,9,10V 45 24 35 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 40 4V 30 25 20 3.5V 15 10 5 21 18 15 12 VGS=10V 9 6 3 3V 0 0 0.0 0.5 1.0 1.5 2.0 VGS=4.5V 2.5 3.0 0 10 20 30 40 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 32 1.6 IDS= 250µA IDS=12A 1.4 Normalized Threshold Voltage RDS(ON) - On Resistance (mΩ) 28 24 20 16 12 8 4 50 1.2 1.0 0.8 0.6 0.4 0.2 2 3 4 5 6 7 8 9 0.0 -50 -25 10 25 50 75 100 125 150 o VGS - Gate-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2009 0 Tj - Junction Temperature ( C) 5 www.anpec.com.tw APM4826K Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 50 2.0 VGS = 10V 1.8 IDS = 12A IS - Source Current (A) Normalized On Resistance 1.6 1.4 1.2 1.0 0.8 0.6 10 o Tj=150 C o Tj=25 C 1 0.4 0.2 o 0.0 -50 -25 RON@Tj=25 C: 9.5mΩ 0 25 50 75 0.1 0.0 100 125 150 o 0.9 1.2 VSD - Source-Drain Voltage (V) Capacitance Gate Charge 1.5 10 Frequency=1MHz VDS=15V 1600 9 1400 8 1200 VGS - Gate-Source Voltage (V) C - Capacitance (pF) 0.6 Tj - Junction Temperature ( C) 1800 Ciss 1000 800 600 400 Coss 200 0 0.3 5 10 15 7 6 5 4 3 2 1 Crss 0 IDS=12A 20 25 0 30 VDS - Drain-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2009 0 5 10 15 20 25 30 QG - Gate Charge (nC) 6 www.anpec.com.tw APM4826K Package Information SOP-8 D E E1 SEE VIEW A h X 45 ° c A 0.25 b GAUGE PLANE SEATING PLANE A1 A2 e L VIEW A S Y M B O L SOP-8 MILLIMETERS MIN. INCHES MAX. A MIN. MAX. 1.75 0.069 0.004 0.25 0.010 A1 0.10 A2 1.25 b 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 5.80 6.20 0.228 0.244 3.80 4.00 0.150 0.157 0.020 0.050 E E1 e 0.049 1.27 BSC 0.050 BSC h 0.25 0.50 0.010 L 0.40 1.27 0.016 0 0° 8° 0° 8° Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2009 7 www.anpec.com.tw APM4826K Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 330.0±2.00 50 MIN. SOP-8 P0 4.0±0.10 T1 d D W E1 12.4+2.00 13.0+0.50 -0.00 -0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 P1 8.0±0.10 C P2 D0 2.0±0.05 1.5+0.10 -0.00 D1 T 1.5 MIN. A0 B0 F 5.5± 0.05 K0 0.6+0.00 0.20 -0.40 6.40±0.20 5.20±0.20 2.10± (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel 2500 Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2009 8 www.anpec.com.tw APM4826K Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2009 9 www.anpec.com.tw APM4826K Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness