APM4953

APM4953 Dual P-Channel Enhancement Mode MOSFET Features • • • • -30V/-4.9A, RDS(ON) = 53mΩ(typ.) @ VGS = -10V RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Pin Description 5 / 5 /  & % , , , , ! " $ # Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems / SO − 8 5 5 / , , , , Ordering and Marking Information APM 4953 H a n d lin g C o d e Tem p. R ange P ackage C ode P-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 °C H a n d lin g C o d e TU : Tube TR : Tape & Reel A P M 4953 K : A P M 4953 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating -30 ±25 TA = 25°C -4.9 -30 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1 www.anpec.com.tw APM4953 Absolute Maximum Ratings (Cont.) Symbol PD TJ TSTG RθJA * (TA = 25°C unless otherwise noted) Rating Unit W °C °C/W Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA = 25°C TA = 100°C 2.5 1.0 150 -55 to 150 50 Electrical Characteristics Symbol Static BV DSS IDSS VGS(th) IGSS R DS(ON) V SD D ynamic Qg Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss = (TA=25°C unless otherwise noted) APM4953 = Typ . Max. Parameter Test Condition Min. -30 Unit D rain-Source Breakdown Voltage Z ero Gate Voltage Drain Current G ate Threshold Voltage G ate Leakage Current D rain-Source On-state Resistance > > VGS=0V , IDS=-250 µA VDS=-24V , VGS=0V VDS=VGS , IDS=-250 µA VGS=± 25V , VDS=0V VGS=-10V , IDS=-4.9A VGS=-4.5V , IDS=-3.6A ISD=-1.7A , VGS=0V VDS=-15V , IGS=-10V lD=-4.6A VDD=-15V , ID=-2A , VGEN=-10V , R G=6 Ω R L=7.5Ω VGS=0V V -1 µA V nA mΩ V -1 -1.5 53 80 -0.7 22.3 4.65 2 10 15 22 15 1260 340 220 -2 ± 100 60 95 -1.3 29 D iode Forward Voltage Total Gate Charge G ate-Source Charge G ate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance O utput Capacitance nC 18 20 38 25 pF ns VDS=-25V R everse Transfer Capacitance Frequency=1.0MHz    Notesa  b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 2 www.anpec.com.tw APM4953 Typical Characteristics Output Characteristics 30 25  Transfer Characteristics 30  -V/5= 5,6,7,8,9,10V -ID-Drain Current (A) 25 20 15 -ID-Drain Current (A) -V/5=4V 20 15 TJ=125°C  10 5 0 -V/5=3V -V/5=2V 0 1 2 3 4 5 6 7 8 10 TJ=25°C TJ=-55°C 5 0 0 1 2 3 4 5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50  On-Resistance vs. Drain Current 0.14  -IDS=250µA -VGS(th)-Threshold Voltage (V) (Normalized)  RDS(on)-On-Resistance (Ω) 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 3 6 9 12 15 V/5=-4.5V V/5=-10V -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C)  -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 3 www.anpec.com.tw  APM4953 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.250  On-Resistance vs. Junction Temperature 2.00  RDS(on)-On-Resistance (Ω)  0.200 0.175 0.150 0.125 0.100 0.075 0.050 0.025 1 2 3 4 5 6 7 8 9 10 RDS(on)-On-Resistance (Ω) (Normalized)  0.225 -I,= 4.9A 1.75 1.50 1.25 -VGS=10V -ID=4.9A  0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V)   TJ - Junction Temperature (°C) Gate Charge 10 Capacitance 2800 2400  -VGS-Gate-Source Voltage (V) -VD=10V -ID=4.9A Frequency=1MHz 8 6 Capacitance (pF) 2000 1600 1200 800 400 Ciss 4 2 Coss Crss  0 0  5 10 15 20 25 0 0 5 10 15 20 25 30 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 4 www.anpec.com.tw   1.00 APM4953 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 30 10  Single Pulse Power 50  -IS-Source Current (Α) 40 Power (W) 30 1 TJ=150°C TJ=25°C  20 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.01 0.1 1 10 100 -VSD-Source-to-Drain Voltage (V )  Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient 2  Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 D= 0.02 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A=P DMZ thJA 4.Surface Mounted 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 5 www.anpec.com.tw   APM4953 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27BSC 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50BSC 8° Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 6 www.anpec.com.tw APM4953 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) Reflow Condition temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 7 APM4953 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 Bo D t W F Ao D1 T2 Ko J A C B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 T2 2 ± 0.2 Ao W 12± 0. 3 Bo 5.2± 0. 1 P 8± 0.1 Ko E 1.75±0.1 t SOP- 8 F 5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 2.1± 0.1 0.3±0.013 Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 8 www.anpec.com.tw APM4953 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 9 www.anpec.com.tw