APM6928
N-Channel Enhancement Mode MOSFET
Features
• • • •
30V/4A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=25mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TSSOP-8 Package
Pin Description
TSSOP-8
D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2
Top View
Applications
•
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G1
D1
D2
G2
Ordering and Marking Information
APM 6928
H a n d lin g C o d e Tem p. R ange P ackage C ode
S1
S1
S2
S2
N-Channel MOSFET
P ackage C ode O : T S S O P -8 O p e r a tio n J u n c tio n T e m p . R a n g e C : - 5 5 t o 1 5 0 °C H a n d lin g C o d e TR : Tape & R eel
A P M 6928 O :
A P M 6928 XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25°C unless otherwise noted)
Rating 30 ±20 4 20 A V Unit
Maximum Drain Current – Continuous Maximum Drain Current – Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002 1 www.anpec.com.tw
* Surface Mounted on FR4 Board, t ≤ 10 sec.
APM6928
Absolute Maximum Ratings Cont.
Symbol PD TJ TSTG RθjA Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=25°C
(TA = 25°C unless otherwise noted)
Rating 1.0 150 -55 to 150 125 Unit W °C °C °C/W
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa
b
(TA = 25°C unless otherwise noted)
Parameter
Test Condition
APM6928 Min. Typ. Max.
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
VGS=0V , IDS=250µA VDS=24V , VGS=0V VDS=24V, VGS=0V, Tj= 55°C VDS=VGS , IDS=250µA VGS=±20V , VDS=0V VGS=10V , IDS=4A VGS=4.5V , IDS=3.4A ISD=1.25A , VGS=0V VDS=15V , IDS= 10A VGS=5V ,
30 1 5 1 20 35 0.73 15 5.8 3.8 11 18 26 54 30 3 ±100 30 45 1.2 20
V µA V nA mΩ V
Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance
nC
VDD=15V , IDS=2A , VGEN=10V , RG=6Ω VGS=0V
17 37 20 1150 230 100
ns
VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz
pF
Notes
a b
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002
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APM6928
Typical Characteristics
Output Characteristics
20
VGS=4,5,6,7,8,9,10V
Transfer Characteristics
20
IDS-Drain Current (A)
IDS-Drain Current (A)
16
15
12
10
8
5
TJ=25°C TJ=125°C TJ=55°C
4
V GS=3V
0
0 0 2 4 6 8 10
0
1
2
3
4
5
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2 1.1
IDS=250µA
On-Resistance vs. Drain Current
0.05
RDS(ON)-On-Resistance (Ω)
0.04
VGS=4.5V
VGS(th)-Variance (V)
1.0 0.9 0.8 0.7 0.6 -50
0.03
0.02
VGS=10V
0.01
-25
0
25
50
75
100 125 150
0.00 0
5
10
15
20
Tj-Junction Temperature (°C)
IDS-Drain Current (A)
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APM6928
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.12
ID=4A
On-Resistance vs. Junction Temperature
1.8
V GS=10V ID=4A
RDS(ON)-On-Resistance (Ω)
0.10 0.08 0.06 0.04 0.02 0.00
RDS(ON)-On-Resistance (Ω) (Normalized)
2 4 6 8 10
1.6 1.4 1.2 1.0 0.8 0.6
0.4 -50
-25
0
25
50
75
100
125
150
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
10 1500
V DS =15V IDS=10A
Capacitance
VGS-Gate-Source Voltage (V)
8
1200
Capacitance (pF)
Ciss
6
900
4
600
2
300
Coss Crss
0
0
5
10
15
20
25
30
0
0
5
10
15
20
25
30
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002
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APM6928
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
20 10 40
Single Pulse Power
ISD-Source Current (A)
30
Power (W)
1.4 1.6
1
TJ=150°C
TJ=25°C
20
10
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.01
0.1
1
10
30
VSD-Source to Drain Voltage (V)
Time (sec)
Normalized Transient Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05 D=0.02 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=125°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted
0.01 1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2002
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APM6928
Packaging Information
PDIP-8 pin ( Reference JEDEC Registration MS-001)
D
E1 1
E
A L e2 e1 e3 A1
A2
1 E3
Dim Min. A A1 A2 D e1 e2 e3 E E1 E3 L φ1 0.38 2.92 9.02
Millimeters Max. 5.33 3.68 10.16 2.54BSC 0.36 1.14 7.62 BSC 6.10 2.92 15° 7.11 10.92 3.81 0.240 0.115 0.56 1.78 0.014 0.045 Min. 0.015 0.115 0.355
Inches Max. 0.210 0.145 0.400 0.100BSC 0.022 0.070 0.300 BSC 0.280 0.430 0.150
15°
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APM6928
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature
183°C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max.
60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C
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APM6928
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles
Carrier Tape
Po E P1 P D
t
F W
Bo
Ao
Ko D1
T2
J C A B
T1
Application
A 330 ± 1
B 62 +1.5 D 1.5 + 0.1
C 12.75+ 0.15 D1 1.5 + 0.1
J 2 + 0.5 Po 4.0 ± 0.1
T1 12.4 ± 0.2 P1 2.0 ± 0.1
T2 2 ± 0.2 Ao 7.0 ± 0.1
W 12± 0. 3 Bo 3.6 ± 0.3
P 8± 0.1 Ko 1.6 ± 0.1
E 1.75±0.1 t 0.3±0.013
TSSOP-8
F 5.5 ± 0. 1
(mm)
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APM6928
Cover Tape Dimensions
Application TSSOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
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