APM7312KC-TUL

APM7312K Dual N-Channel Enhancement Mode MOSFET Features • 20V/6A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =45mΩ(typ.) @ VGS = 4.5V RDS(ON) =110mΩ(typ.) @ VGS = 2.5V Pin Description D1 D1 D2 D2 • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (8) D1 S1 G1 S2 G2 Top View of SOP − 8 (7) D1 (6) D2 (5) D2 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S1 (1) S2 (3) (2) G1 (4) G2 N-Channel MOSFET Ordering and Marking Information APM7312 Lead Free Code Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM7312 K : APM7312 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM7312K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=10V Rating 20 ±16 6 24 1.7 150 -55 to 150 2 0.8 62.5 Unit V A A °C W °C/W Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM7312K Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=250µA VDS=16V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V VGS=10V, IDS=6A 20 1 30 0.7 0.9 35 45 110 0.7 1.5 ±100 40 54 120 1.3 V µA V nA mΩ V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=4.5V, IDS=4A VGS=2.5V, IDS=2A ISD=1.7A, VGS=0V Diode Forward Voltage b Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge 12 VDS=10V, VGS=4.5V, IDS=6A 3 4.5 16 nC Gate-Source Charge Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 www.anpec.com.tw APM7312K Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) Test Condition APM7312K Min. Typ. Max. Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω 2.7 450 100 60 6 5 16 5 12 10 30 10 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM7312K Typical Characteristics Power Dissipation 2.5 8 Drain Current 2.0 6 1.5 ID - Drain Current (A) o Ptot - Power (W) 4 1.0 2 0.5 o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance Duty = 0.5 0.2 0.1 ID - Drain Current (A) im it s( on )L 10 300µs 1ms 10ms Rd 0.1 0.05 0.02 0.01 1 100ms 1s 0.01 0.1 DC Single Pulse 0.01 0.01 TA=25 C 0.1 1 10 100 o 1E-3 1E-4 Mounted on 1in pad o RθJA : 62.5 C/W 2 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 4 www.anpec.com.tw APM7312K Typical Characteristics (Cont.) Output Characteristics 20 18 16 VGS= 4, 5, 6, 7, 8, 9, 10V 140 VGS=2.5V 160 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 120 100 80 60 40 20 0 ID - Drain Current (A) 14 12 3V 10 8 6 4 2 0 0 2 4 2V 6 8 VGS=4.5V VGS=10V 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 24 1.6 1.4 Gate Threshold Voltage IDS= 250µA Normalized Threshold Voltage 2.5 20 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 ID - Drain Current (A) 16 12 8 Tj=25 C 4 Tj=-55 C Tj=125 C o o o 0 0.0 0.5 1.0 1.5 2.0 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 5 www.anpec.com.tw APM7312K Typical Characteristics (Cont.) Drain-Source On Resistance 2.4 VGS = 10V IDS = 6A 20 Source-Drain Diode Forward Normalized On Resistance 2.0 10 1.6 IS - Source Current (A) Tj=150 C o 1.2 Tj=25 C o 0.8 1 0.4 R ON@Tj=25 C: 35mΩ 0.0 -50 -25 0 25 50 75 100 125 150 0.3 0.0 0.3 0.6 0.9 1.2 1.5 1.8 o Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 750 Frequency=1MHz 625 Gate Charge 5 VDS=10V IDS= 6A VGS - Gate - source Voltage (V) 4 C - Capacitance (pF) 500 Ciss 3 375 2 250 125 Coss Crss 1 0 0 4 8 12 16 20 0 0 3 6 9 12 15 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 6 www.anpec.com.tw APM7312K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 7 www.anpec.com.tw APM7312K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 2 5 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM7312K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – P ackage Peak Reflow Tem peratures 3 3 P ackage Thickness Volum e m m Volum e m m < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C T able 2. Pb-free Process – P ackage Classification Reflow Tem peratures 3 3 3 P ackage Thickness Volum e mm Volum e mm Volum e mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2 .5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device m anufacturer/supplier s hall a ssure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0 ° C. For exam ple 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 9 www.anpec.com.tw APM7312K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 ± 0.1 T2 2± 0.2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 SOP-8 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 (mm) Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10 www.anpec.com.tw