APM7313KC-TU

APM7313K Dual N-Channel Enhancement Mode MOSFET Features • 30V/6A, RDS(ON) = 21mΩ (typ.) @ VGS = 10V RDS(ON) = 27mΩ (typ.) @ VGS = 4.5V Pin Description • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (8) D1 Top View of SOP − 8 (7) D1 (6) D2 (5) D2 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems (2) G1 (4) G2 S1 (1) S2 (3) N-Channel MOSFET Ordering and Marking Information APM7313 Lead Free Code Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM7313 K : APM7313 XXXXX No te : ANPEC le ad -free produ cts con tai n m ol din g com pou nd s/d ie attach material s and 10 0% ma tte i n p la te te rmin atio n fi nish ; wh ich are full y compl iant with Ro HS and compa tibl e wi th both SnPb an d le ad-free sold ieri ng op era tio ns. AN PEC le ad-free produ cts me et or exceed th e l ead -free req uireme nts of IPC /JEDEC J STD -02 0C fo r MSL classi ficati on at lea d-fre e p eak re flo w temp era ture. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. C opyright © A NPEC Electronics C orp. Rev. B.3 - Nov., 2005 1 www.anpec.com.tw APM7313K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* I S* TJ TSTG PD* Rθ JA* Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300 µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=10V Rating 30 ±20 6 24 3 150 -55 to 150 2 0.8 62.5 Unit V A A °C W °C/W Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS R DS(ON) VSD a a Parameter Test Condition APM7313K Min. T yp. Max. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b VGS=0V, I DS=250µA VDS=20V, VGS=0V T A=25°C VDS=VGS, IDS=250 µA VGS=±20V, VDS=0V VGS=10V, ID S=6A VGS=4.5V, I DS=2A ISD=2A, VGS=0V 30 1 30 1 1.5 21 27 0.7 2 ±100 28 42 1.3 V µA V nA mΩ V Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge 19 VDS=15V, VGS=10V, IDS=6A 1.6 3.6 25 nC Gate-Source Charge C opyright © A NPEC Electronics C orp. Rev. B.3 - Nov., 2005 2 www.anpec.com.tw APM7313K Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) Test Condition APM7313K Min. T yp. Max. Unit Dynamic Characteristics RG Gate Resistance Ciss C oss C rss td(ON) Tr td(OFF) Tf Notes: VGS=0V,VD S=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD =15V, RL=15 Ω, IDS=1A, VGEN=10V, R G=6 Ω 2.1 835 150 105 7 8 28 6 13 15 40 9 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns a : Pulse test ; pulse width ≤300µs, duty cycle≤ 2%. b : Guaranteed by design, not subject to production testing. C opyright © A NPEC Electronics C orp. Rev. B.3 - Nov., 2005 3 www.anpec.com.tw APM7313K Typical Characteristics Power Dissipation 2.5 8 Drain Curre nt 2.0 1.5 ID - Drain Current (A) o 6 Ptot - Power (W) 4 1.0 2 0.5 o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance Duty = 0.5 0.2 ID - Drain Current (A) Lim it 10 Rd s(o n) 1ms 10ms 0.1 0.1 0.05 0.02 0.01 1 100ms 1s 0.01 Single Pulse Mounted on 1in pad o Rθ JA : 62.5 C/W 2 0.1 DC 0.01 0.01 T A=25 C 0.1 1 10 100 o 1E-3 1E-4 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) C opyright © A NPEC Electronics C orp. Rev. B.3 - Nov., 2005 4 www.anpec.com.tw APM7313K Typical Characteristics (Cont.) Output Characteristics 30 VGS= 4, 5, 6, 7, 8, 9, 10V 3.5V 40 36 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ ) 25 32 28 24 VGS= 10V 20 16 12 VGS= 4.5V ID - Drain Current (A) 20 15 3V 10 5 2.5V 0 0 1 2 3 4 5 0 4 8 12 16 20 24 VDS - Drain-Sourc e Voltage (V) ID - Drain Current (A) Transfer Characteristics 30 1.75 1.50 1.25 1.00 0.75 0.50 0.25 Gate Threshold Voltage IDS= 250µΑ 20 15 Tj =125 C 10 Tj =25 C 5 o o Tj=-55 C o 0 Normalized Threshold Voltage 5 25 ID - Drain Current (A) 0 1 2 3 4 0.00 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) C opyright © A NPEC Electronics C orp. Rev. B.3 - Nov., 2005 5 www.anpec.com.tw APM7313K Typical Characteristics (Cont.) Drain-Source On Resistance 1.6 V GS = 10V IDS = 6A Source-Drain Diode Forward 30 Normalized On Resistance 1.4 10 Tj=125 C o 1.2 1.0 IS - Source Current (A) Tj=25 C 1 o 0.8 0.6 RON@Tj =25 C: 21m Ω -25 0 25 50 75 100 125 150 o 0.4 -50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 1400 Frequency=1MHz 1200 10 VDS= 15V ID= 6A Gate Charge VGS - Gate - source Voltage (V) 8 C - Capacitance (pF) 1000 Ciss 800 600 400 200 Crss 0 Coss 6 4 2 0 0 5 10 15 20 25 30 0 4 8 12 16 20 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) C opyright © A NPEC Electronics C orp. Rev. B.3 - Nov., 2005 6 www.anpec.com.tw APM7313K Packaging Information SOP-8 pin ( Reference JE DEC Registrat ion MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Millimeters Min. 1.35 0.10 4.80 3.80 5.80 0.40 0.33 1.27BSC 8° Max. 1.75 0.25 5.00 4.00 6.20 1.27 0.51 Min. 0.053 0.004 0.189 0.150 0.228 0.016 0.013 0.015X45 Inches Max. 0.069 0.010 0.197 0.157 0.244 0.050 0.020 0.50BSC 8° C opyright © A NPEC Electronics C orp. Rev. B.3 - Nov., 2005 7 www.anpec.com.tw APM7313K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) Reflow Condition TP tp Critical Zone T L to T P Ramp-up TL Temperature tL Tsmax Tsmin Ramp-down ts Preheat 25 t 2 5 C to Peak ° Time Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to T P) Preheat 100°C 150°C - Temperature Min (Tsmin) 150°C 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (TL) 60-150 seconds 60-150 seconds - Time (t L) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 °C of actual Time within 5 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. C opyright © A NPEC Electronics C orp. Rev. B.3 - Nov., 2005 8 www.anpec.com.tw APM7313K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 P ackage Thickness Volume mm Volume mm < 350 ≥ 350 < 2.5 mm 240 +0/-5 °C 225 +0/- 5 ° C ≥ 2.5 mm 225 +0/-5 °C 225 +0/- 5 ° C T able 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 P ackage Thickness Volume mm Volume mm Volume mm < 350 3 50 -2000 > 2000 < 1.6 mm 260 +0 ° C * 260 +0° C* 260 +0 ° C * 1 .6 mm – 2.5 mm 260 +0 ° C * 250 +0° C* 245 +0 ° C * ≥ 2.5 mm 250 +0 ° C * 245 +0° C* 245 +0 ° C * * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 °C. For example 260 ° C+0 °C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko C opyright © A NPEC Electronics C orp. Rev. B.3 - Nov., 2005 9 www.anpec.com.tw APM7313K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330± 1 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 ± 0.1 T2 2± 0 .2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2 ± 0.1 P 8± 0.1 E 1.75± 0.1 S OP-8 D D1 Po 1.55+ 0.25 4.0 ± 0.1 1.55 ± 0.1 Ko t 2.1 ± 0.1 0 .3± 0.013 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 C opyright © A NPEC Electronics C orp. Rev. B.3 - Nov., 2005 10 www.anpec.com.tw