APM7314K

APM7314 N-Channel Enhancement Mode MOSFET Features • • • • 30V/6A , RDS(ON)=21mΩ(typ.) @ VGS=10V RDS(ON)=32mΩ(typ.) @ VGS=5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Pin Description SO-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. D1 D1 D2 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering and Marking Information APM7314 Handling Code Temp. Range Package Code Package Code K : SO-8 Temp. Range C : 0 to 70° C Handling Code TR : Tape & Reel APM7314 K : APM7314 XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 1 www.anpec.com.tw APM7314 Absolute Maximum Ratings Symbol VDSS VGSS I * D (TA = 25°C unless otherwise noted) Rating 30 ±20 6 24 1.6 0.625 150 -55 to 150 80 W W °C °C °C/W A Unit V Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Maximum Power Dissipation TA=25°C TA=100°C IDM PD TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Parameter (TA = 25°C unless otherwise noted) APM7314 Min. 30 1 5 1 21 32 0.6 3 ±100 24 35 1.1 Typ. Max. Test Condition Unit VGS=0V , IDS=250µA VDS=24V , VGS=0V VDS=24V, VGS=0V, Tj= 55°C VDS=VGS , IDS=250µA VGS=±20V , VDS=0V VGS=10V , IDS=3.5A VGS=5V , IDS=2A ISD=2A , VGS=0V V µA V nA mΩ V Copyright  ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 2 www.anpec.com.tw APM7314 Electrical Characteristics Cont. Symbol Parameter (TA = 25°C unless otherwise noted) APM7314 Min. Typ. 15 5.8 3.8 11 18 26 54 30 pF ns Max. 20 nC Test Condition VDS=15V , IDS= 10A VGS=5V , Unit Dynamicb Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance VDD=15V , IDS=2A , VGEN=10V , RG=6Ω VGS=0V 17 37 20 1200 220 100 VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 3 www.anpec.com.tw APM7314 Typical Characteristics Output Characteristics 30 40 Transfer Characteristics VDS=10V 25 VGS=4,4.5,6,8,10V IDS-Drain Current (A) 20 IDS-Drain Current (A) 30 15 VGS=3.5V 20 TJ=25°C 10 V GS=3V 5 10 TJ=125°C TJ=-55°C VGS=2.5V 0 1 2 3 4 5 6 7 8 9 10 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.2 On-Resistance vs. Drain Current 0.050 IDS=250µA 0.045 RDS(ON)-On-Resistance (Ω) 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 VGS(th)-Variance (V) 1.0 VGS=4.5V 0.8 VGS=10V 0.6 0.4 -50 -25 0 25 50 75 100 125 150 0.000 0 5 10 15 20 25 30 Tj-Junction Temperature (°C) IDS-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 4 www.anpec.com.tw APM7314 Typical Characteristics Cont. On-Resistance vs. Gate-to-Source Voltage 0.050 0.045 On-Resistaence vs. Junction Temperature RDS(ON)-On Resistance (Ω) (Normalized) 1.6 IDS=3.5A RDS (ON) - On-Resistance (Ω) VGS=10V IDS=3.5A 1.4 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 2 3 4 5 6 7 8 9 10 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 Gate Voltage (V) Tj-Junction Temperature (°C) Gate Charge 10 2000 Capacitance Characteristics VGS-Gate-to-Source Voltage (V) VDS=15V IDS=10A 8 1000 Ciss C-Capacitance (pF) 6 500 Coss 4 2 100 Crss Frequency=1MHz 0 0 5 10 15 20 25 30 0.1 1 10 30 QG-Total Gate Charge (nC) VDS-Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 5 www.anpec.com.tw APM7314 Typical Characteristics Cont. Source-Drain Diode Forward Voltage 100 42 41 Single Pulse Power Rthjc = 2 °C/W ISD-Source Current (A) 40 10 39 Power (W) 38 37 36 35 1 TJ=125°C TJ=25°C TJ=-55°C 34 33 -50 -25 0 25 50 75 100 125 150 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD-Source to Drain Voltage Time (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 6 www.anpec.com.tw APM7314 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L Inche s 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 7 www.anpec.com.tw APM7314 Physical Specifications Terminal Material Lead Solderability Packaging Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. 2500 devices per reel Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C 10 –20 seconds Time within 5°C of actual peak temperature Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 8 APM7314 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D W F Bo Ao D1 T2 Ko J C A B T1 A 330±1 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 ± 0.1 T2 2± 0.2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Application SOP-8 Application SOP-8 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright  ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 9 www.anpec.com.tw 9 APM7314 Cover Tape Dimensions Carrier Width Cover Tape Width 12 9.3 (mm) Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.2 - Mar., 2002 10 www.anpec.com.tw