APM7316

APM7316 Dual N-Channel Enhancement Mode MOSFET Features • • • • 20V/6A , RDS(ON)=25mΩ(typ.) @ VGS=4.5V RDS(ON)=40mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Pin Description S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 SO-8 D1 D1 D2 D2 Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G1 G2 S1 S2 Ordering and Marking Information APM7316 Handling Code Temp. Range Package Code N-Channel MOSFET Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel APM7316 K : APM7316 XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±16 6 20 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1 www.anpec.com.tw APM7316 Absolute Maximum Ratings (Cont.) Symbol PD TJ TSTG RθjA Parameter TA=25°C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=100°C (TA = 25°C unless otherwise noted) Rating 2.5 W 1 150 -55 to 150 50 °C °C °C/W Unit * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa Dynamic Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss b (TA = 25°C unless otherwise noted) APM7316 Typ. Max. Parameter Test Condition Min. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance VGS=0V , IDS=250µA VDS=18V , VGS=0V VDS=VGS , IDS=250µA VGS=±16V , VDS=0V VGS=4.5V , IDS=6A VGS=2.5V , IDS=2A ISD=2.3A , VGS=0V VDS=10V , IDS= 1A VGS=4.5V , 20 1 0.5 0.7 25 40 0.7 9.5 2.6 2.5 16 1.0 ±100 35 50 1.1 12 V µA V nA mΩ V nC 32 74 78 35 ns VDD=10V , IDS=1A , VGEN =4.5V , RG=0.2Ω VGS=0V 40 42 18 675 178 105 Output Capacitance VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 2 www.anpec.com.tw APM7316 Typical Characteristics Output Characteristics 20 VGS=3,4,5,6,7,8,9,10V 2.5V Transfer Characteristics 20 ID-Drain Current (A) ID-Drain Current (A) 16 16 12 12 8 2V 8 TJ=125°C TJ=-55°C 4 1.5V 4 TJ=25°C 0 0 1 2 3 4 5 6 7 8 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250uA On-Resistance vs. Drain Current 0.07 VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance (Ω) 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.06 0.05 VGS=2.5V 0.04 0.03 0.02 0.01 VGS=4.5V -25 0 25 50 75 100 125 150 0.00 0 2 4 6 8 10 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 3 www.anpec.com.tw APM7316 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.10 0.09 ID=6A On-Resistance vs. Junction Temperature 2.00 VGS=4.5V ID=6A RDS(ON)-On-Resistance (Ω) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 1 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance (Ω) (Normalized) 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 1000 V DS =10V ID=1A Capacitance Frequency=1MHz VGS-Gate-Source Voltage (V) 8 800 6 Capacitance (pF) Ciss 600 4 400 Coss Crss 2 200 0 0 4 8 12 16 20 0 0 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 4 www.anpec.com.tw APM7316 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 20 10 60 Single Pulse Power IS-Source Current (A) 48 Power (W) 1.2 1.4 36 1 TJ=150°C TJ=25°C 24 12 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 0.01 0.1 1 10 100 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 D= 0.02 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 5 www.anpec.com.tw APM7316 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 6 www.anpec.com.tw APM7316 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 7 APM7316 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2 ± 0. 1 P 8± 0.1 Ko E 1.75 ±0.1 t SOP- 8 F 5.5 ± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1 ± 0.1 0.3 ±0.013 Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 8 www.anpec.com.tw APM7316 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 9 www.anpec.com.tw