APM7318

APM7318 Dual N-Channel Enhancement Mode MOSFET Features • • • • 20V/8A , RDS(ON)=15mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Pin Description SO-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G1 D1 D1 D2 D2 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering and Marking Information APM 7318 H andling C ode Tem p. Range Package C ode Package C ode K : S O -8 O peration Junction Tem p. R ange C : -55 to 150° C H andling C ode TR : Tape & Reel AP M 7318 K : AP M 7318 XX XX X XX XX X - D ate Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2003 1 www.anpec.com.tw APM7318 Absolute Maximum Ratings Symbol VDSS VGSS ID * IDM PD Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Maximum Power Dissipation TA=25 °C TA=100 °C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient Parameter (TA = 25°C unless otherwise noted) Rating 20 ±16 8 24 2.5 1.0 150 -55 to 150 50 Unit V A W W °C °C °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25°C unless otherwise noted) Test Condition APM7318 Min. Typ. Max. 20 1 0.7 0.9 15 30 0.7 14 5 2.8 9 1.5 ±100 20 40 1.3 17 nC 15 20 43 24 ns Unit Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V , IDS=250µA VDS=18V , VGS=0V VDS=VGS , IDS=250µA VGS=±16V , VDS=0V VGS=4.5V , IDS=8A VGS=2.5V , IDS=2A ISD=4A , VGS=0V VDS=10V , IDS= 6A VGS=4.5V V µA V nA mΩ V Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd td(ON) Tr td(OFF) Tf Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=10V , IDS=2A , VGEN=4.5V , RG=0.2Ω 14 30 16 1220 335 215 VGS=0V Ciss Input Capacitance Coss Output Capacitance VDS=15V Crss Reverse Transfer Capacitance Frequency=1.0MHz Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% b : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2003 2 pF www.anpec.com.tw APM7318 Typical Characteristics Output Characteristics 30 VGS=3,4,5,6,7,8,9,10V Transfer Characteristics 30 25 25 IDS-Drain Current (A) IDS-Drain Current (A) 20 15 10 5 0 V GS=2.5V 20 15 10 5 0 0.0 TJ=25°C TJ=125°C TJ=-55°C VGS=2V 0 1 2 3 4 5 6 7 8 9 10 0.5 1.0 1.5 2.0 2.5 3.0 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250µA On-Resistance vs. Drain Current 0.05 VGS(th)-Threshold Voltage (V) (Normalized) 1.25 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance (Ω) 0.04 VGS=2.5V 0.03 0.02 VGS=4.5V 0.01 -25 0 25 50 75 100 125 150 0.00 0 2 4 6 8 10 Tj-Junction Temperature (°C) IDS-Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2003 3 www.anpec.com.tw APM7318 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.08 IDS=8A On-Resistaence vs. Junction Temperature 2.00 VGS=4.5V IDS=8A RDS (ON) - On-Resistance (Ω) 0.06 0.05 0.04 0.03 0.02 0.01 0.00 1 2 3 4 5 6 7 8 9 10 RDS(ON)-On Resistance (Ω) (Normalized) 0.07 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 Gate Voltage (V) Tj-Junction Temperature (°C) Gate Charge 10 Capacitance Characteristics 1800 Frequency=1MHz VGS-Gate-to-Source Voltage (V) VDS=10V IDS=6A C-Capacitance (pF) 8 1500 Ciss 1200 900 600 Coss 6 4 2 300 0 Crss 0 0 5 10 15 20 25 30 0 5 10 15 20 QG-Total Gate Charge (nC) VDS-Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2003 4 www.anpec.com.tw APM7318 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 30 10 Single Pulse Power 80 70 60 ISD-Source Current (A) TJ=150°C TJ=25°C Power (W) 1.2 1.4 50 40 30 20 10 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 0.01 0.1 1 10 30 VSD-Source to Drain Voltage Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 D= 0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2003 5 www.anpec.com.tw APM7318 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2003 6 www.anpec.com.tw APM7318 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2003 7 APM7318 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D W F Bo Ao D1 T2 Ko J C A B T1 A 330±1 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 ± 0.1 T2 2± 0.2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Application SOP-8 Application SOP-8 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2003 8 www.anpec.com.tw APM7318 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.3 - May., 2003 9 www.anpec.com.tw