APM9424

APM9424 N-Channel Enhancement Mode MOSFET Features • • • • 20V/10A, RDS(ON) = 10mΩ(typ.) @ VGS = 4.5V RDS(ON) = 15mΩ(typ.) @ VGS = 2.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D SO − 8 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G DD DD S SS Ordering and Marking Information APM 9424 H a n d lin g C o d e Tem p. R ange P ackage C ode N-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 9424 K : APM 9424 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±16 T A = 2 5 °C 10 30 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 1 www.anpec.com.tw APM9424 Absolute Maximum Ratings (Cont.) Symbol PD TJ TSTG RθJA* Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA = 25°C TA = 100°C (TA = 25°C unless otherwise noted) Rating 2.5 1.0 150 -55 to 150 50 Unit W °C °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Parameter (TA=25°C unless otherwise noted) Test Condition APM9424 Typ. Max. Min. Unit VGS=0V , IDS=250µA VDS=16V , VGS=0V VDS=VGS , IDS=250µA VGS=±16V , VDS=0V VGS=4.5V , IDS=10A VGS=2.5V , IDS=8A ISD=2.3A , VGS=0V 20 1 0.7 0.9 10 15 0.8 28.2 5.2 7.6 35 80 115 40 2400 720 480 1.5 ±100 13 20 1.3 37 V µA V nA mΩ V Dynamicb Qg Total Gate Charge Qgs Gate-Source Charge Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer VDS=10V , VGS=4.5V , IDS=10A nC 70 160 235 85 VDD=15V , IDS=10A , VGEN=4.5V , RG=6Ω ns VGS=0V , VDS=15V Frequency=1.0MHz pF Notes a b : Guaranteed by design, not subject to production testing : Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2% Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 2 www.anpec.com.tw APM9424 Typical Characteristics Output Characteristics 30 25 VGS=2.5,3,4,5,6,7,8,9,10V Transfer Characteristics 30 25 ID-Drain Current (A) ID-Drain Current (A) 20 15 VGS=2V 20 15 10 5 TJ=125°C TJ=25°C TJ=-55°C 10 5 VGS=1.5V 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.75 IDS=250µA On-Resistance vs. Drain Current 0.030 VGS(th)-Threshold Voltage (V) RDS(on)-On-Resistance (Ω) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.025 0.020 VGS=2.5V 0.015 VGS=4.5V 0.010 0.005 0.000 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 3 www.anpec.com.tw APM9424 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.05 ID=10A On-Resistance vs. Junction Temperature 1.8 VGS=4.5V IDS=10A RDS(on)-On-Resistance (Ω) 0.04 RDS(on)-On-Resistance (Ω) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 0.03 0.02 0.01 0.00 0 2 4 6 8 10 0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 5 VDS=10V IDS=10A Capacitance 4000 Frequency=1MHz VGS-Gate-Source Voltage (V) 4 3200 Capacitance (pF) Ciss 3 2400 2 1600 Coss 1 800 Crss 0 0 5 10 15 20 25 30 35 0 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 4 www.anpec.com.tw APM9424 Typical Characteristics Source-Drain Diode Forward Voltage 30 10 80 Single Pulse Power IS-Source Current (Α) 60 1 Power (W) 0.1 TJ=150°C TJ=25°C 40 0.01 20 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.01 0.1 1 10 100 VSD-Source-to-Drain Voltage (V ) Time (sec) Normalized Thermal Transient Impedance, Junction to Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 D= 0.02 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 5 www.anpec.com.tw APM9424 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 6 www.anpec.com.tw APM9424 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 7 APM9424 Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2 ± 0. 1 P 8± 0.1 Ko E 1.75±0.1 t SOP- 8 F 5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1± 0.1 0.3 ±0.013 Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 8 www.anpec.com.tw APM9424 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 9 www.anpec.com.tw