APM9926CKC-TR

APM9926/C N-Channel Enhancement Mode MOSFET Features • • • • 20V/6A , RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Pin Description APM9926 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 S1 G1 S2 G2 1 2 3 4 8 7 6 5 APM9926C D D D D D S1 S1 G1 1 2 3 4 8 7 6 5 D S2 S2 G2 SO-8 D1 D1 TSSOP-8 D1 SO-8 D TSSOP-8 D G1 G1 G1 G1 S1 S1 S1 D2 S1 D S1 D S1 D2 D2 G2 G2 G2 G2 S2 S2 S2 S2 S2 S2 ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.6 - Sep., 2002 1 www.anpec.com.tw APM9926/C Ordering and Marking Information APM9926/C Handling Code Temp. Range Package Code Package Code K : SO-8 O : TSSOP-8 Operation Junction Temp. Range C : -55 to 150° C Handling Code TR : Tape & Reel APM9926/C K/O : APM9926/C XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID * IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±10 6 20 SO-8 TSSOP-8 SO-8 TSSOP-8 1.6 1.0 0.625 0.4 150 -55 to 150 80 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed TA=25°C PD Maximum Power Dissipation TA=100°C W TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient °C °C °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Copyright  ANPEC Electronics Corp. Rev. A.6 - Sep., 2002 2 www.anpec.com.tw APM9926/C Electrical Characteristics Cont. Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25°C unless otherwise noted) APM9926/C Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V , IDS=250µA VDS=16V , VGS=0V VDS=VGS , IDS=250µA VGS=±8V , VDS=0V VGS=4.5V , IDS=6A VGS=2.5V , IDS=5.2A ISD=1.7A , VGS=0V VDS=10V , IDS= 6A VGS=4.5V , 20 1 0.5 0.7 28 38 0.6 10 3.6 2 17 1.5 ±100 32 45 1.3 V µA V nA mΩ V Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Tr td(OFF) Tf Ciss Coss Crss Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance nC VDD=10V , IDS=1A , VGEN=4.5V , RG=0.2Ω VGS=0V 15 45 25 520 110 70 ns Output Capacitance VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.6 - Sep., 2002 3 www.anpec.com.tw APM9926/C Typical Characteristics Output Characteristics 20 VGS=2,3,4,5,6,7,8,9,10V 1V Transfer Characteristics 20 ID-Drain Current (A) 16 ID-Drain Current (A) 15 12 0.5V 10 8 TJ=25°C 4 5 TJ=125°C TJ=-55°C 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250uA On-Resistance vs. Drain Current 0.040 VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance (Ω) 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.035 0.030 0.025 0.020 0.015 0.010 VGS=4.5V VGS=10V -25 0 25 50 75 100 125 150 0 5 10 15 20 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.6 - Sep., 2002 4 www.anpec.com.tw APM9926/C Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.12 0.11 ID=6A On-Resistance vs. Junction Temperature 2.00 VGS=10V 1.75 ID=6A RDS(ON)-On-Resistance (Ω) 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 1 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance (Ω) (Normalized) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 Capacitance 750 Frequency=1MHz VGS-Gate-Source Voltage (V) V DS =10V ID=6A 8 625 Capacitance (pF) Ciss 500 375 250 Coss 6 4 2 125 0 Crss 0 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.6 - Sep., 2002 5 www.anpec.com.tw APM9926/C Typical Characteristics Source-Drain Diode Forward Voltage 20 80 Single Pulse Power IS-Source Current (A) 10 60 Power (W) TJ=150°C TJ=25°C 40 20 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 0.1 1 10 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=80°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE D=0.02 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.6 - Sep., 2002 6 www.anpec.com.tw APM9926/C Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.6 - Sep., 2002 7 www.anpec.com.tw APM9926/C Packaging Information TSSOP-8 e 87 2x E/2 E1 E S ( 2) GAUGE PLANE 12 e/2 D A2 A b A1 0.25 L (L1) ( 3) 1 Dim A A1 A2 b D e E E1 L L1 R R1 S φ1 φ2 φ3 Millimeters Min. 0.00 0.80 0.19 2.9 0.65 BSC 6.40 BSC 4.30 0.45 1.0 REF 0.09 0.09 0.2 0° 0.004 0.004 0.008 0° 4.50 0.75 0.169 0.018 Max. 1.2 0.15 1.05 0.30 3.1 Min. 0.000 0.031 0.007 0.114 Inches Max. 0.047 0.006 0.041 0.012 0.122 0.026 BSC 0.252 BSC 0.177 0.030 0.039REF 12° REF 12° REF 8° 12° REF 12° REF 8° Copyright  ANPEC Electronics Corp. Rev. A.6 - Sep., 2002 8 www.anpec.com.tw APM9926/C Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.6 - Sep., 2002 9 APM9926/C Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 A p p lic a tio n A 330 ± 1 B 6 2 + 1 .5 D C 1 2 .7 5 + 0 .1 5 D1 J 2 ± 0 .5 Po T1 1 2 .4 ± 0 .2 P1 2 .0 ± 0 .1 T1 1 2 .4 ± 0 .2 P1 2 .0 ± 0 .1 T2 2 ± 0 .2 Ao 6 .4 ± 0 .1 T2 2 ± 0 .2 Ao 7 .0 ± 0 .1 W 12± 0. 3 Bo 5 .2 ± 0 . 1 W 12± 0. 3 Bo 3 .6 ± 0 .3 P 8 ± 0 .1 Ko E 1 .7 5 ± 0 .1 t SOP- 8 F 5 .5 ± 1 1 .5 5 + 0 .1 1 .5 5 + 0 .2 5 4 .0 ± 0 .1 B 6 2 + 1 .5 D 1 .5 + 0 .1 C 1 2 .7 5 + 0 .1 5 D1 1 .5 + 0 .1 J 2 + 0 .5 Po 4 .0 ± 0 .1 2 .1 ± 0 .1 0 .3 ± 0 .0 1 3 P 8 ± 0 .1 Ko E 1 .7 5 ± 0 .1 t A p p lic a tio n A 330 ± 1 T S S O P -8 F 5 .5 ± 0 . 1 1 .6 ± 0 .1 0 .3 ± 0 .0 1 3 Copyright  ANPEC Electronics Corp. Rev. A.6 - Sep., 2002 10 www.anpec.com.tw APM9926/C Cover Tape Dimensions Application SOP- 8 TSSOP- 8 Carrier Width 12 12 Cover Tape Width 9.3 9.3 Devices Per Reel 2500 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.6 - Sep., 2002 11 www.anpec.com.tw