APM9928KC-TR

APM9928 Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 20V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=50mΩ(typ.) @ VGS=3.0V Pin Description 5 / 5 / ! "  & % $ # , , , , • P-Channel -20V/-3.2A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=120mΩ(typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package / , SO-8 , 5 • • • / Applications 5 • , , Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information APM9928 Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel APM9928 K : APM9928 XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 1 www.anpec.com.tw APM9928 Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM PD TJ TSTG RθjA Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=25°C TA=100°C (TA = 25°C unless otherwise noted) N-Channel 20 ±16 5 10 2.5 1.0 150 -55 to 150 50 P-Channel -20 ±16 3.2 -10 2.5 1.0 Unit V A W °C °C °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Parameter (TA = 25°C unless otherwise noted) APM9928 Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 35 50 80 120 0.8 -0.8 0.7 -0.7 0.9 -0.9 20 -20 1 -1 1.5 -1.5 ±100 ±100 45 60 100 150 1.3 -1.3 V mΩ Typ. Max. Test Condition Unit VGS=0V , IDS=250µA VDS=16V , VGS=0V VDS=-16V , VGS=0V VDS=VGS , IDS=250µA VDS=VGS , IDS=-250µA VGS=±16V , VDS=0V VGS=4.5V , IDS=5.0A V µA V nA RDS(ON)= Drain-Source On-state Resistance VGS=3.0V , IDS=3.9A VGS=-4.5V , IDS=-3.2A VGS=-3.0V , IDS=-2.0A ISD=1.7A , VGS=0V ISD=-1.8A , VGS=0V VSD= Diode Forward Voltage Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 2 www.anpec.com.tw APM9928 Electrical Characteristics (Cont.) Symbol Dynamic Q g Qgs Qgd td(ON) T r td(OFF) T f Ciss Coss Crss > (TA = 25°C unless otherwise noted) APM9928 Unit Min. Typ. Max. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 4.7 3.9 0.72 1 0.96 1.4 12 21 8 45 32 36 11 20 376 495 115 130 58 60 pF 24 40 17 83 60 70 22 38 ns 7 6 nC Parameter Test Condition Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance N-Channel VDS=10V , IDS= 1A VGS=4.5V  P-Channel VDS=-10V , IDS=-1A VGS=-4.5V  N-Channel VDD=10V , IDS=1A , VGEN=4.5V , RG=10Ω P-Channel VDD=-10V , IDS=-1A , VGEN=-4.5V , RG=10Ω  VGS=0V Output Capacitance Reverse Transfer Capacitance VDS=15V Frequency=1.0MHz  Notes b : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 3 www.anpec.com.tw APM9928 Typical Characteristics N-Channel Output Characteristics 20  Transfer Characteristics 20  VGS=4,5,6,7,8,9,10V VGS=3V ID-Drain Current (A) 15  10 VGS=2.5V ID-Drain Current (A) 15 TJ=125°C 5 VGS=2V VGS=1.5V 5 TJ=25°C TJ=-55°C 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50  On-Resistance vs. Drain Current 0.07  IDS=250uA VGS(th)-Threshold Voltage (V) (Normalized)  RDS(ON)-On-Resistance (Ω)  1.25 1.00 0.75 0.50 0.25 0.00 -50 0.06 0.05 0.04 0.03 0.02 0.01 VGS=4.5V VGS=10V  -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10  Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 4 www.anpec.com.tw   10 APM9928 Typical Characteristics (Cont.) N-Channel On-Resistance vs. Gate-to-Source Voltage 0.10 0.09  On-Resistance vs. Junction Temperature 1.8  ID=5A RDS(ON)-On-Resistance (Ω)  0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 1 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance (Ω) (Normalized)  1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 VGS=4.5V ID=5A  VGS - Gate-to-Source Voltage (V)  -25 0 25 50 75 100 125 150  TJ - Junction Temperature (°C) Gate Charge 5 600 V,5=10 V I,5= 1 A 500 Capacitance  VGS-Gate-Source Voltage (V) Frequency=1MHz 4 Capacitance (pF) 3 400 300 200 Ciss 2 1 Coss 100 0 1 2 3 4 5 0 Crss 0 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 5 www.anpec.com.tw   APM9928 Typical Characteristics (Cont.) N-Channel Source-Drain Diode Forward Voltage 20 10  Single Pulse Power 30 25  IS-Source Current (A) TJ=150°C TJ=25°C Power (W) 20 15 10 5 1  0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 0.1 1 10 30 VSD -Source-to-Drain Voltage (V) Time(sec) Normalized Thermal Transient Impedence, Junction to Ambient 2  Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 6 www.anpec.com.tw   APM9928 Typical Characteristics P-Channel Output Characteristics 10  Transfer Characteristics 10  -V GS=4,5,6,7,8,9,10V -ID-Drain Current (A) 6 -V GS=3V -ID-Drain Current (A) 8 8 6  4 -V GS=2.5V 4 TJ=125°C TJ=-55°C TJ=25°C 2 -V GS=2V 2 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50  On-Resistance vs. Drain Current 0.20  -I DS=250uA -VGS(th)-Threshold Voltage (V) (Normalized)  1.25 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance (Ω)  0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -VGS=4.5V -VGS=3V  -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C)  0 1 2 3 4 5 6 7 8 9 10 -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 7 www.anpec.com.tw   APM9928 Typical Characteristics (Cont.) P-Channel On-Resistance vs. Gate-to-Source Voltage 0.20  On-Resistance vs. Junction Temperature 1.8  RDS(ON)-On-Resistance (Ω)  0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance (Ω) (Normalized)  0.18 -ID=3.2A 1.6 1.4 1.2 1.0 0.8 0.6 -VGS=4.5V -ID=3.2A  0.4 -50 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V)   TJ - Junction Temperature (°C) Gate Charge 5 800 -V,5=10 V -I,5= 1 A 700 Capacitance  -VGS-Gate-Source Voltage (V) Frequency=1MHz 4 Capacitance (pF) 600 500 Ciss 3 2 300 200 100 Coss Crss 1 0 0 1 2 3 4 5 6 0 0 5 10 15 20 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 8 www.anpec.com.tw  400  APM9928 Typical Characteristics (Cont.) P-Channel Source-Drain Diode Forward Voltage 20 10  Single Pulse Power 30 25  -IS-Source Current (A)  1 10 5 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.01 0.1 1 10 30 -VSD -Source-to-Drain Voltage (V) Time(sec) Normalized Thermal Transient Impedence, Junction to Ambient 2  Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 9 www.anpec.com.tw   TJ=150°C TJ=25°C Power (W) 20 15 APM9928 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27BSC 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50BSC 8° Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 10 www.anpec.com.tw APM9928 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature Time VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 11 APM9928 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 Bo D t W F Ao D1 T2 Ko J A C B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2 ± 0. 1 P 8 ± 0.1 Ko E 1.75 ±0.1 t SOP- 8 F 5.5 ± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1 ± 0.1 0.3 ±0.013 Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 12 www.anpec.com.tw APM9928 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.3 - July., 2003 13 www.anpec.com.tw