APM9930

APM9930/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V RDS(ON)=25mΩ(typ.) @ VGS=2.5V Pin Description APM9930 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 G1 S2 G2 APM9930C 1 2 3 4 8 7 6 5 D D D D • P-Channel -20V/-5A, RDS(ON)=60mΩ(typ.) @ VGS=-10V RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V SO-8 D1 D1 SO-8 D • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package S1 S1 S2 G1 G1 G2 N-Channel MOSFET Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G2 N- and P-Channel MOSFET S2 D2 D2 P-Channel MOSFET Ordering and Marking Information APM9930/C Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel APM9930/C K : APM9930/C XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 1 www.anpec.com.tw APM9930/C Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM PD TJ TSTG RθjA Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed TA=25°C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=100°C (TA = 25°C unless otherwise noted) N-Channel 20 ±12 15 30 2.5 1.0 150 -55 to 150 50 P-Channel -20 ±12 -5 -10 2.5 W 1.0 °C °C °C/W A V Unit * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Parameter (TA = 25°C unless otherwise noted) APM9930/C Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 12 N-Ch 17 25 60 P-Ch 72 98 0.6 -0.6 20 -20 1 -1 1.3 -1.3 ±100 ±100 15 20 30 70 80 105 mΩ nA Typ. Max. Test Condition Unit VGS=0V , IDS=250µA VDS=18V , VGS=0V VDS=-18V , VGS=0V VDS=VGS , IDS=250µA VDS=VGS , IDS=-250µA VGS=±12V , VDS=0V VGS=±10V , VDS=0V VGS=10V , IDS=15A VGS=4.5V , IDS=5A V µA V Gate Leakage Current RDS(ON)a Drain-Source On-state Resistance VGS=2.5V , IDS=2A VGS=-10V , IDS=-5A VGS=-4.5V , IDS=-3.2A VGS=-2.5V , IDS=-1A Notes a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 2 www.anpec.com.tw APM9930/C Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol VSDa Dynamica Qg Q gs Q gd td(ON) Parameter Diode Forward Voltage Test Condition ISD=5A , V GS=0V ISD=-2A , V GS=0V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel N-Ch P-Ch N-Ch P-Ch N-Ch VGS=0V P-Ch N-Ch P-Ch N-Ch P-Ch VDD=-10V , IDS=-1A , VGEN=-4.5V , RG =10Ω APM9930/C Min. 0.6 -0.6 14 6.8 5 3.6 2.8 1.08 6 21 5 45 16 36 5 20 1225 495 330 130 220 60 12 42 10 85 40 80 20 40 Typ. Max. 1.3 -1.3 22 16 Unit V Total Gate Charge N-Channel VDS=10V , IDS= 6A VGS=4.5V P-Channel VDS=-10V , IDS=-1A VGS=-4.5V N-Channel VDD=10V , IDS=1A , VGEN=4.5V , RG=10Ω Gate-Source Charge nC Gate-Drain Charge Turn-on Delay Time Tr Turn-on Rise Time ns td(OFF) Tf Ciss Coss Crss Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=15V Frequency=1.0MHz pF Notes a : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 3 www.anpec.com.tw APM9930/C Typical Characteristics N-Channel Output Characteristics 20 VGS=3,4,5,6,7,8,9,10V Transfer Characteristics 20 ID-Drain Current (A) ID-Drain Current (A) 16 VGS=2.5V 15 12 10 8 V GS=2V TJ=125°C 5 TJ=25°C TJ=-55°C 4 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250uA On-Resistance vs. Drain Current 0.030 VGS(th)-Threshold Voltage (V) (Normalized) 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance (Ω) 1.25 0.025 0.020 0.015 0.010 0.005 0.000 VGS=4.5V V GS=10V -25 0 25 50 75 100 125 150 0 4 8 12 16 20 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 4 www.anpec.com.tw APM9930/C Typical Characteristics (Cont.) N-Channel On-Resistance vs. Gate-to-Source Voltage 0.16 ID=15A On-Resistance vs. Junction Temperature 2.0 VGS=10V ID=15A RDS(ON)-On-Resistance (Ω) 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance (Ω) (Normalized) 0.14 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 V DS=10V ID=6A Capacitance 1800 Frequency=1MHz VGS-Gate-Source Voltage (V) 8 1500 Capacitance (pF) Ciss 6 1200 900 600 Coss 4 2 300 Crss 0 0 5 10 15 20 25 30 0 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 5 www.anpec.com.tw APM9930/C Typical Characteristics (Cont.) N-Channel Source-Drain Diode Forward Voltage 20 10 80 70 60 Single Pulse Power IS-Source Current (A) Power (W) 50 40 30 20 10 TJ=150°C TJ=25°C 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 0.1 1 10 30 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE D=0.02 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 6 www.anpec.com.tw APM9930/C Typical Characteristics P-Channel Output Characteristics 10 -VGS=4,5,6,7,8,9,10V Transfer Characteristics 10 -ID-Drain Current (A) 8 8 -ID-Drain Current (A) TJ=25°C TJ=125°C TJ=-55°C 6 -V GS=3V 6 4 4 2 2 0 0 2 4 6 8 10 0 0 1 2 3 4 5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 -IDS=250uA On-Resistance vs. Drain Current 0.10 -VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance (Ω) 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.09 0.08 0.07 -VGS=10V -VGS=4.5V 0.06 0.05 0.04 0.03 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 Tj - Junction Temperature (°C) -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 7 www.anpec.com.tw APM9930/C Typical Characteristics (Cont.) P-Channel On-Resistance vs. Gate-to-Source Voltage 0.50 0.45 -ID=5A On-Resistance vs. Junction Temperature 1.8 -VGS=10V -ID=5A RDS(ON)-On-Resistance (Ω) 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance (Ω) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 10 -V DS=10V -ID=1A Capacitance 700 Frequency=1MHz -VGS-Gate-Source Voltage (V) 600 8 6 Capacitance (pF) 500 400 300 200 100 Ciss 4 2 Coss Crss 0 0 2 4 6 8 10 12 14 0 0 5 10 15 20 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 8 www.anpec.com.tw APM9930/C Typical Characteristics (Cont.) P-Channel Source-Drain Diode Forward Voltage 10 80 Single Pulse Power -IS-Source Current (A) 60 1 TJ=150°C TJ=25°C Power (W) 1.2 1.4 40 0.1 20 0.0 0.2 0.4 0.6 0.8 1.0 0 0.01 0.1 1 10 30 -VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE D=0.02 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 9 www.anpec.com.tw APM9930/C Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 10 www.anpec.com.tw APM9930/C Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 11 APM9930/C Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2 ± 0. 1 P 8 ± 0.1 Ko E 1.75 ±0.1 t SOP- 8 F 5.5 ± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1 ± 0.1 0.3 ±0.013 Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 12 www.anpec.com.tw APM9930/C Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 13 www.anpec.com.tw