APM9932/C
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V
Pin Description
APM9932
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
S1 G1 S2 G2
APM9932C
1 2 3 4 8 7 6 5 D D D D
•
P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V
SO-8
D1 D1
SO-8
D
• • •
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
G1 G1 G2
Applications
•
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G2
S1
S1
S2
N-Channel MOSFET
S2
N- and P-Channel MOSFET
D2
D2
P-Channel MOSFET
Ordering and Marking Information
APM9932/C
Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel
APM9932/C K :
APM9932/C XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 1 www.anpec.com.tw
APM9932/C
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM PD TJ TSTG RθjA Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed TA=25°C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=100°C
(TA = 25°C unless otherwise noted)
N-Channel 20 ±16 15 30 2.5 1.0 150 -55 to 150 50 P-Channel -20 ±12 -6 -10 2.5 W 1.0 °C °C °C/W A V Unit
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Parameter
(TA = 25°C unless otherwise noted)
APM9932/C Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.6 -0.6 12 17 30 45 0.6 -0.6 20 -20 1 -1 1.3 -1.3 ±100 ±100 18 27 42 60 1.3 -1.3 V mΩ nA Typ. Max.
Test Condition
Unit
VGS=0V , IDS=250µA VDS=18V , VGS=0V VDS=-18V , VGS=0V VDS=VGS , IDS=250µA VDS=VGS , IDS=-250µA VGS=±16V , VDS=0V VGS=±12V , VDS=0V VGS=10V , IDS=9A VGS=4.5V , IDS=7A VGS=-4.5V , IDS=-6A VGS=-2.5V , IDS=-5A ISD=5A , VGS=0V ISD=-2A , VGS=0V
V µA V
Gate Leakage Current
RDS(ON)a
Drain-Source On-state Resistance
VSDa
Diode Forward Voltage
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
2
www.anpec.com.tw
APM9932/C
Electrical Characteristics (Cont.)
Symbol Dynamica Qg Qgs Qgd td(ON) Total Gate Charge N-Channel VDS=10V , IDS= 6A Gate-Source Charge VGS=4.5V P-Channel VDS=-4V , IDS=-1A VGS=-4.5V N-Channel VDD=10V , IDS=1A , Tr Turn-on Rise Time VGEN=4.5V , RG=10Ω P-Channel td(OFF) Tf Ciss Coss Crss Turn-off Delay Time VDD=-4V , IDS=-1A , VGEN=-4.5V , RG=10Ω Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel VGS=0V , VDS=15V Frequency=1.0MHz P-Channel VGS=0V , VDS=-4V Frequency=1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 14 19 5 4.1 2.8 1.6 6 23 5 45 16 45 5 32 1225 1400 330 520 220 320 pF 12 45 10 80 40 90 20 55 ns 22 25 nC Parameter
(TA = 25°C unless otherwise noted)
APM9932/C Min. Typ. Max.
Test Condition
Unit
Gate-Drain Charge
Turn-on Delay Time
Notes
a
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
3
www.anpec.com.tw
APM9932/C
Typical Characteristics
N-Channel
Output Characteristics
20
VGS=3,4,5,6,7,8,9,10V
Transfer Characteristics
20
ID-Drain Current (A)
ID-Drain Current (A)
16
VGS=2.5V
15
12
10
8
V GS=2V
TJ=125°C
5
TJ=25°C TJ=-55°C
4
0
0
2
4
6
8
10
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250uA
On-Resistance vs. Drain Current
0.030
VGS(th)-Threshold Voltage (V) (Normalized)
1.00 0.75 0.50 0.25 0.00 -50
RDS(ON)-On-Resistance (Ω)
1.25
0.025 0.020 0.015 0.010 0.005 0.000
VGS=4.5V
V GS=10V
-25
0
25
50
75
100 125 150
0
4
8
12
16
20
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
4
www.anpec.com.tw
APM9932/C
Typical Characteristics (Cont.)
N-Channel
On-Resistance vs. Gate-to-Source Voltage
0.16
ID=15A
On-Resistance vs. Junction Temperature
2.0
VGS=10V ID=15A
RDS(ON)-On-Resistance (Ω)
0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 9 10
RDS(ON)-On-Resistance (Ω) (Normalized)
0.14
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50
-25
0
25
50
75
100 125
150
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
10
V DS=10V ID=6A
Capacitance
1800
Frequency=1MHz
VGS-Gate-Source Voltage (V)
8
1500
Capacitance (pF)
Ciss
6
1200 900 600
Coss
4
2 300
Crss
0
0
5
10
15
20
25
30
0
0
5
10
15
20
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
5
www.anpec.com.tw
APM9932/C
Typical Characteristics (Cont.)
N-Channel
Source-Drain Diode Forward Voltage
20 10 80 70 60
Single Pulse Power
IS-Source Current (A)
Power (W)
50 40 30 20 10
TJ=150°C
TJ=25°C
1
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.01
0.1
1
10
30
VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE
D=0.02
0.01 1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
6
www.anpec.com.tw
APM9932/C
Typical Characteristics
P-Channel
Output Characteristics
10
-VGS=2,3,4,5,6,7,8,9,10V
Transfer Characteristics
10
-ID-Drain Current (A)
6
-VGS=2V
-ID-Drain Current (A)
8
8
6
4
4
TJ=125°C
2
2
TJ=25°C TJ=-55°C
0
0
1
2
3
4
5
6
7
8
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
-VDS - Drain-to-Source Voltage (V)
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
-IDS=250uA
On-Resistance vs. Drain Current
0.08
-VGS(th)-Threshold Voltage (V) (Normalized)
1.25 1.00 0.75 0.50 0.25 0.00 -50
RDS(ON)-On-Resistance (Ω)
0.07 0.06
-VGS=2.5V
0.05 0.04
-VGS=4.5V
0.03 0.02 0.01
-25
0
25
50
75
100 125 150
0.00
0
1
2
3
4
5
6
7
8
9
10
Tj - Junction Temperature (°C)
-ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
7
www.anpec.com.tw
APM9932/C
Typical Characteristics (Cont.)
P-Channel
On-Resistance vs. Gate-to-Source Voltage
0.12
-ID=6A
On-Resistance vs. Junction Temperature
1.8
-VGS=4.5V -ID=6A
RDS(ON)-On-Resistance (Ω)
0.10 0.08 0.06 0.04 0.02 0.00
RDS(ON)-On-Resistance (Ω) (Normalized)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50
1
2
3
4
5
6
7
8
9
10
-25
0
25
50
75
100 125
150
-VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
5
-VDS=4V -ID=1A
Capacitance
2000
Frequency=1MHz
-VGS-Gate-Source Voltage (V)
4
1600
3
Capacitance (pF)
Ciss
1200
2
800
Coss
1
400
Crss
0
0
4
8
12
16
20
0
0
2
4
6
8
10
QG - Gate Charge (nC)
-VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
8
www.anpec.com.tw
APM9932/C
Typical Characteristics (Cont.)
P-Channel
Source-Drain Diode Forward Voltage
10 80
Single Pulse Power
-IS-Source Current (A)
60 1
TJ=150°C TJ=25°C
Power (W)
1.2 1.4
40
0.1
20
0.0
0.2
0.4
0.6
0.8
1.0
0 0.01
0.1
1
10
30
-VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE
D=0.02
0.01 1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
9
www.anpec.com.tw
APM9932/C
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 φ1
Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8°
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
10
www.anpec.com.tw
APM9932/C
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature
183°C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max.
60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C
www.anpec.com.tw
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
11
APM9932/C
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1 T2
Ko
J C A B
T1
Application
A 330 ± 1
B 62 +1.5 D
C 12.75+ 0.15 D1
J 2 ± 0.5 Po
T1 12.4 ± 0.2 P1 2.0 ± 0.1
T2 2 ± 0.2 Ao 6.4 ± 0.1
W 12± 0. 3 Bo 5.2 ± 0. 1
P 8 ± 0.1 Ko
E 1.75 ±0.1 t
SOP- 8
F 5.5 ± 1
1.55 +0.1 1.55+ 0.25 4.0 ± 0.1
2.1 ± 0.1 0.3 ±0.013
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
12
www.anpec.com.tw
APM9932/C
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002
13
www.anpec.com.tw