APM9933

APM9933 Dual P-Channel Enhancement Mode MOSFET Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V Pin Description S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOP-8 Package SOP − 8 S1 S2 Applications • G1 G2 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. D1 D1 D2 D2 Ordering and Marking Information APM 9933 H a n d lin g C o d e Tem p. R ange P a ck ag e C o d e P-Channel MOSFET P ackage C ode K : S O P -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & R eel A P M 9933 K : A P M 9933 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating -20 ±12 -3.5 -16 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1 www.anpec.com.tw APM9933 Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient (TA = 25°C unless otherwise noted) Rating 2.5 1.0 150 -55 to 150 50 W °C °C °C/W Unit Electrical Characteristics Symbol Static BV DSS ∆ BV DSS ∆Tj IDSS V GS(th) IGSS ∆ V GS(th) ∆Tj R DS(ON) a (TA = 25°C unless otherwise noted) Test Condition APM9933 Min. Ty p. Max. Unit Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Gate Threshold Voltage Temperature Coefficient Drain-Source On-state Resistance On-State Drain Current Forward Transconductance Diode Forward Voltage V GS =0V , IDS=-250 µ A ID=-250 µ A, Referenced to 25°C V DS =-16V , VGS =0V V DS =V GS , IDS=-250 µ A V GS = ± 12V , V DS =0V ID=-250 µ A, Referenced to 25°C V GS =-4.5V , IDS=-3.4A V GS =-3.0V , IDS=-2.9A V GS =-2.7V , IDS=-2.6A V GS =-4.5V , VDS =-5.0V V DS =-4.5V , ID=-3.8A ISD =-2.0A , VGS=0V V DS =-6V , IDS=-3.5A V GS =-4.5V V DD =-6V , IDS =-1A , V GEN =-4.5V , R G =6 Ω , R L =6 Ω V GS =0V -20 -16 -1 -0.5 -0.7 -1 ± 100 2.5 45 52 60 -10 10 -0.7 12.7 1.75 2.8 12 25 52 18 1290 300 210 21 42 85 32 -1.3 15 70 80 100 V mV/°C µA V nA mV/°C mΩ A S V ID(on) g FS V SD a Dynamic b Qg Total Gate Charge Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC ns V DS =-15V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing 2 www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 APM9933 Typical Characteristics Output Characteristics 12 -VGS=2,3,4,5,6,7,8,9,10V Transfer Characteristics 12 10 10 -ID-Drain Current (A) -ID-Drain Current (A) 8 6 4 2 -VGS=1V -VGS=1.5V 8 6 4 2 0 0.0 TJ=125°C TJ=25°C TJ=-55°C 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 -IDS=250uA On-Resistance vs. Drain Current 0.08 -VGS(th)-Threshold Voltage (V) (Normalized) 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance (Ω) 1.25 0.07 0.06 -VGS=3V 0.05 0.04 0.03 0.02 -VGS=4.5V -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 Tj - Junction Temperature (°C) -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 3 www.anpec.com.tw APM9933 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.14 -ID=3.4A On-Resistance vs. Junction Temperature 2.00 -VGS=4.5V -ID=3.4A RDS(ON)-On-Resistance (Ω) RDS(ON)-On-Resistance (Ω) (Normalized) 0 1 2 3 4 5 6 7 8 9 10 0.12 0.10 0.08 0.06 0.04 0.02 0.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 5 -VDS=6V -ID=3.5A Capacitance 2500 Frequency=1MHz -VGS-Gate-Source Voltage (V) 4 2000 3 Capacitance (pF) 1500 Ciss 2 1000 1 500 Coss Crss 0 0 3 6 9 12 15 0 0 5 10 15 20 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 4 www.anpec.com.tw APM9933 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 10 100 Single Pulse Power -IS-Source Current (A) 80 Power (W) 60 1 TJ=150°C TJ=25°C 40 20 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.01 0.1 1 10 100 -VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A =P DMZ thJA 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 5 www.anpec.com.tw APM9933 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 6 www.anpec.com.tw APM9933 Physical Specifications Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Terminal Material Lead Solderability Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature 3°C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. VPR 10 °C /second max. 60 seconds 215~ 219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 7 APM9933 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application SOP-8 Application SOP-8 A 330±1 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 ± 0.1 T2 2± 0.2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 8 www.anpec.com.tw APM9933 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 9 www.anpec.com.tw