APM9935

APM9935 Dual P-Channel Enhancement Mode MOSFET Features • • • • -20V/-6A, RDS(ON)=45mΩ(max.) @ VGS=-4.5V RDS(ON)=65mΩ(max.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Pin Description 5 / 5 / ! "  & % $ # , , , , SO − 8 5 5 Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. / / , , , , Ordering and Marking Information APM9935 Lead Free Code Handling Code Temp. Range Package Code APM9935 XXXXX P-Channel MOSFET Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Orginal Device XXXXX - Date Code APM9935K : Absolute Maximum Ratings Symbol VDSS VGSS ID  * (TA = 25°C unless otherwise noted) Rating -20 ±12 -6 -10 Unit V A Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed IDM ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 1 www.anpec.com.tw APM9935 Absolute Maximum Ratings (Cont.) Symbol PD TJ TSTG * RθJA (TA = 25°C unless otherwise noted) Rating Unit W °C °C °C/W Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient TA=25°C TA=100°C 2.5 1.0 150 -55 to 150 50 * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics S ym bol S tatic B V DSS I DSS V G S(th) I G SS R DS(O N) V SD  D ynam ic Q g Q gs  Q gd  t d(O N) T r t d(O FF) T f C iss  C oss  C rss  > = = (TA = 25°C unless otherwise noted) APM 9935 Typ. M ax. Param eter Test Condition M in. -20 Unit D rain-Source Breakdown Voltage Z ero G ate Voltage D rain C urrent G ate T hreshold Voltage G ate Leakage C urrent D rain-Source O n-state R esistance D iode Forward Voltage Total G ate C harge G ate-Source C harge G ate-D rain C harge Turn-on D elay Tim e Turn-on R ise Tim e Turn-off D elay Tim e Turn-off Fall Tim e Input C apacitance O utput C apacitance R everse Transfer C apacitance V G S =0V , I DS =-250 µ A V DS =-16V , V G S =0V V DS =V G S , I DS =-250 µ A V G S = ± 12V , V DS =0V V G S =-4.5V , I DS =-6A V G S =-2.5V , I DS =-5A I S =-2A , V G S =0V V -1 ìA V nA mΩ V -0.5 -0.7 -1 ±100 45 65 -0.7 17 4.1 1.6 23 45 45 32 1242 341 217 -1.3 22 V DS =-4V , I DS =-6A V G S =-4.5V V DD =-4V , I DS =-6A , V G EN =-4.5V , R G =10 Ω nC 45 80 90 55 pF ns V G S =0V , V DS =-15V Frequency=1.0M H z  Notes  a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% b : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 2 www.anpec.com.tw APM9935 Typical Characteristics Output Characteristics 10 8  Transfer Characteristics 10  -VGS=3,4,5,6,7,8,9,10V -ID-Drain Current (A) -ID-Drain Current (A) 8 6 -VGS=2V 6  4 4 TJ=125°C 2 0 2 TJ=25°C TJ=-55°C 0 1 2 3 4 5 6 7 8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 -I DS=250uA On-Resistance vs. Drain Current 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 -VGS=4.5V -VGS=2.5V -VGS(th)-Threshold Voltage (V) (Normalized)  1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 RDS(ON)-On-Resistance (Ω)   0.00 Tj - Junction Temperature (°C)  0 1 2 3 4 5 6 7 8 9 10 -ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 3 www.anpec.com.tw  APM9935 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.12  On-Resistance vs. Junction Temperature 1.8  -ID=6A RDS(ON)-On-Resistance (Ω)  0.10 0.08 0.06 0.04 0.02 0.00 RDS(ON)-On-Resistance (Ω) (Normalized)  1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -VGS=4.5V -ID=6A  1 2 3 4 5 6 7 8 9 10 -25 0 25 50 75 100 125 150  -VGS - Gate-to-Source Voltage (V)  TJ - Junction Temperature (°C) Gate Charge 5 Capacitance 2000  -VGS-Gate-Source Voltage (V) -VDS=4V -ID=6A Frequency=1MHz 4 1600 3 Capacitance (pF) Ciss 1200 2 800 Coss Crss 1 400 0 0 4 8 12 16 20  0 0 4 8 12 16 20 QG -Total Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 4 www.anpec.com.tw   APM9935 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 10  Single Pulse Power 80  -IS-Source Current (A) 60 TJ=150°C TJ=25°C Power (W) 1 0.1 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.01 0.1 1 10 30 -VSD -Source-to-Drain Voltage (V) Time(sec) Normalized Thermal Transient Impedence, Junction to Ambient  2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A=P DM Z thJA 4.Surface Mounted D=0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 5 www.anpec.com.tw   40  APM9935 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27BSC 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50BSC 8° Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 6 www.anpec.com.tw APM9935 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183°C Pre-heat temperature Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature Time VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 7 APM9935 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 Bo D t W F Ao D1 T2 Ko J A C B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2 ± 0. 1 P 8 ± 0.1 Ko E 1.75 ±0.1 t SOP- 8 F 5.5 ± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1 ± 0.1 0.3 ±0.013 Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 8 www.anpec.com.tw APM9935 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Aug., 2003 9 www.anpec.com.tw