APM9945K
Dual N-Channel Enhancement Mode MOSFET
Features
•
60V/3A, RDS(ON) =100mΩ(typ.) @ VGS = 10V RDS(ON) =120mΩ(typ.) @ VGS = 4.5V
Pin Description
D1 D1 D2 D2
• • •
Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
S1 G1 S2 G2
SOP − 8
(7 ) D1 (8 ) D1 (5 ) D2 (6 ) D2
Applications
•
Power Management in Desktop or DC/DC Converters
(2 ) G1
(4 ) G2
S1 (1 )
S2 (3 )
N-Channel MOSFET
Ordering and Marking Information
APM 9945 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Dev ice Blank : Original Dev ice XXXXX - Date Code
APM 9945 K :
APM 9945 XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw
APM9945K
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA*
Note: *Surface Mounted on 1in pad area, t ≤ 10sec.
2
(TA = 25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation for Single Operation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C VGS=10V
Rating 60 ±20 3 20 3 150 -55 to 150 2 0.8 62.5
Unit V A A °C W °C/W
Electrical Characteristics
Symbol Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM9945K Min. Typ. Max.
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD
a a
VGS=0V, IDS=250µA VDS=48V, VGS=0V VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=3A VGS=4.5V, IDS=2A ISD=3A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=10Ω, IDS=1A, VGEN=10V, RG=6Ω
60 1 1 2 100 120 0.8 3 ±100 135 160 1.3
V µA V nA mΩ V Ω pF
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf
3.4 390 75 20 8 9 20 8 18 20 40 20
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
ns
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM9945K
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25°C unless otherwise noted)
APM9945K Min. Typ. Max.
Test Condition
Unit
Gate Charge Characteristics Qg Qgs Qgd Total Gate Charge
20 VDS=15V, VGS=10V, IDS=3A 5 5
26 nC
Gate-Source Charge Gate-Drain Charge
Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM9945K
Typical Characteristics
Power Dissipation
2.5 4
Drain Current
2.0
1.5
ID - Drain Current (A)
3
Ptot - Power (W)
2
1.0
1 0.5
0.0
0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
50 2 1
Thermal Transient Impedance
Duty = 0.5 0.2 0.1
ID - Drain Current (A)
on )L
im
10
s(
it
Rd
300µs 1ms
0.1
0.05 0.02 0.01
1
10ms 100ms 1s
0.1
0.01
Single Pulse Mounted on 1in pad o RθJA : 62.5 C/W
2
DC
TA=25 C 0.01 0.01 0.1
o
1
10
100
1E-3 1E-4
1E-3
0.01
0.1
1
10 30
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM9945K
Typical Characteristics (Cont.)
Output Characteristics
20 VGS= 6,7,8,9,10V 18 5V 0.18 16 0.20
Drain-Source On Resistance
RDS(ON) - On - Resistance (Ω)
0.16 0.14 0.12 0.10 0.08 0.06 0.04
VGS=4.5V
ID - Drain Current (A)
14 12 10 8 6 4 2 3V 0 0 2 4 6 8 10 4V
VGS=10V
0.02
0
2
4
6
8
10
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
20 18 16 1.6 1.4 1.2 1.0 0.8 0.6 0.4 2 0 0 1 2 3 4 5 6 7
Gate Threshold Voltage
IDS =250µA
ID - Drain Current (A)
14 12 10 8 6 4 Tj=25 C
o
Tj=125 C
o
Tj=-55 C
o
Normalized Threshold Voltage
0.2 -50 -25
0
25
50
75
100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM9945K
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.0 VGS = 10V 1.8 IDS = 3A 10 20
Source-Drain Diode Forward
Normalized On Resistance
1.6
IS - Source Current (A)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 RON@Tj=25 C: 100mΩ 0 25 50 75 100 125 150
o
Tj=150 C
o
1
Tj=25 C
o
0.1 0.0
0.4
0.8
1.2
1.6
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
600 Frequency=1MHz 500 10 VDS= 15 V ID = 3A
Gate Charge
VGS - Gate - source Voltage (V)
30
8
C - Capacitance (pF)
400
Ciss
6
300
4
200 Coss Crss 0 0 5 10 15 20 25
100
2
0
0
5
10
15
20
25
VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM9945K
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 φ1
Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8°
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APM9945K
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
TP
(IR/Convection or VPR Reflow)
tp C ritical Zone T L to T P
R am p-up
T e m p e ra tu re
TL T sm ax
tL
T sm in R am p-down ts Preheat
25
t 2 5 °C to Peak
T im e
Classificatin Reflow Profiles
Profile Feature Sn-Pb Eutectic Assembly Large Body Small Body Pb-Free Assembly Large Body Small Body 3°C/second max. 150°C 200°C 60-180 seconds 3°C/second max 217°C 60-150 seconds 245 +0/-5°C 250 +0/-5°C 10-30 seconds 20-40 seconds 6°C/second max. 8 minutes max.
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Average ramp-up rate 3°C/second max. (TL to TP) Preheat - Temperature Min (Tsmin) 100°C - Temperature Mix (Tsmax) 150°C - Time (min to max)(ts) 60-120 seconds Tsmax to TL - Ramp-up Rate Tsmax to TL - Temperature(TL) 183°C - Time (tL) 60-150 seconds Peak Temperature(Tp) 225 +0/-5°C 240 +0/-5°C Time within 5°C of actual Peak 10-30 seconds 10-30 seconds Temperature(tp) Ramp-down Rate 6°C/second max. 6 minutes max. Time 25°C to Peak Temperature
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 8
Note: All temperatures refer to topside of the package. Measured on the body surface.
APM9945K
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1 T2
Ko
J C A B
T1
Application
A 330±1
B 62 ± 1.5
C 12.75 + 0.1 5
J 2 + 0.5
T1 12.4 +0.2
T2 2± 0.2
W 12 + 0.3 - 0.1 Bo 5.2± 0.1
P 8± 0.1
E 1.75± 0.1
SOP-8
F D D1 Po P1 Ao 5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1
Ko t 2.1± 0.1 0.3±0.013
(mm)
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APM9945K
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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