APM9953KC-TRL

APM9953K Dual P-Channel Enhancement Mode MOSFET Features • -20V/-3A , RDS(ON)=76mΩ(typ.) @ VGS=-10V RDS(ON)=93mΩ(typ.) @ VGS=-4.5V Pin Description D1 D1 D2 D2 • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) S1 G1 S2 G2 Top View of SOP − 8 (1) S1 (3) S2 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems (2) G1 (4) G2 D1 (7) D1 (8) D2 (5) D2 (6) P-Channel MOSFET Ordering and Marking Information APM9953 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SO P-8 O perating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM9953 K : APM9953 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM9953K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 (TA = 25°C unless otherwise noted) Rating -20 ±10 -3 VGS=-10V -12 -1 150 -55 to 150 TA=25°C TA=100°C 2 0.8 62.5 W °C/W V A A °C Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM9953 Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=-250µA VDS=-16V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±10V, VDS=0V VGS=-10V, IDS=-3A VGS=-4.5V, IDS=-2A ISD=-0.5A, VGS=0V -20 -1 -30 -0.5 -0.7 76 93 -0.7 -1 ±100 100 125 -1.3 V µA V nA mΩ V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge 5.3 VDS=-10V, VGS=-4.5V, IDS=-3A 1.1 0.7 7 nC Gate-Source Charge Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 www.anpec.com.tw APM9953K Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) Test Condition APM9953 Min. Typ. Max. Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω 10.5 550 120 75 13 36 45 37 21.5 56 69.5 57.5 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM9953K Typical Characteristics Power Dissipation 2.5 4 Drain Current 2.0 1.5 -ID - Drain Current (A) 3 Ptot - Power (W) 2 1.0 1 0.5 o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 TA=25 C,VG=-10V 0 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 50 Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 10 -ID - Drain Current (A) R ds (o n) m Li it 1ms 10ms 0.1 0.05 0.02 0.01 1 100ms 1s 0.1 DC 0.01 Single Pulse 0.01 0.01 TA=25 C 0.1 1 10 100 o 1E-3 1E-4 Mounted on 1in pad o RθJA : 62.5 C/W 2 1E-3 0.01 0.1 1 10 30 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 4 www.anpec.com.tw APM9953K Typical Characteristics (Cont.) Output Characteristics 12 VGS= -3, -4, -5, -6, -7, -8, -9, -10V 120 110 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) 10 -ID - Drain Current (A) 100 90 80 70 60 50 VGS= -4.5V 8 -2V 6 VGS= -10V 4 -1.5V 2 -1V 0 0 2 4 6 8 10 0 2 4 6 8 10 12 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 12 1.6 Gate Threshold Voltage IDS = -250µA -ID - Drain Current (A) Tj=125 C 8 Tj=25 C Tj=-55 C 4 o o o Normalized Threshold Vlotage 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 6 2 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 5 www.anpec.com.tw APM9953K Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = -10V 1.6 IDS = -3A Tj=150 C o Source-Drain Diode Forward 10 Normalized On Resistance 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj=25 C: 76mΩ 0 25 50 75 100 125 150 o -IS - Source Current (A) 1.4 1 Tj=25 C o 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Tj - Junction Temperature (°C) -VSD - Source-Drain Voltage (V) Capacitance 800 Frequency=1MHz Gate Charge 5 VDS= -10V IDS= -3A Ciss 480 -VGS - Gate-source Voltage (V) 20 640 4 C - Capacitance (pF) 3 320 2 160 Crss 0 0 4 8 Coss 1 12 16 0 0 1 2 3 4 5 6 -VDS - Drain-Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 6 www.anpec.com.tw APM9953K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 7 www.anpec.com.tw APM9953K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 2 5 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM9953K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – P ackage Peak Reflow Tem peratures 3 3 P ackage Thickness Volum e m m Volum e m m < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C T able 2. Pb-free Process – P ackage Classification Reflow Tem peratures 3 3 3 P ackage Thickness Volum e mm Volum e mm Volum e mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2 .5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device m anufacturer/supplier s hall a ssure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0 ° C. For exam ple 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 9 www.anpec.com.tw APM9953K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 ± 0.1 T2 2± 0.2 Ao 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 SOP-8 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 Ko t 2.1± 0.1 0.3±0.013 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 (mm) Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10 www.anpec.com.tw