APM9968C

APM9968C N-Channel Enhancement Mode MOSFET Features • • • • 20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V RDS(ON)=20mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TSSOP-8 Packages Pin Description D S1 S1 G1 1 2 3 4 8 7 6 5 D S2 S2 G2 TSSOP-8 D D Applications • Power Management in Notebook Computer , G1 G2 S1 S1 S2 S2 Portable Equipment and Battery Powered Systems. • N-Channel MOSFET Zener Diode Protected Gate Provide Human Body Mode Electrostatic Discharge Protection to 2500 V. Ordering and Marking Information APM9968C Handling Code Temp. Range Package Code Package Code O : TSSOP-8 Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel APM9968C O : APM9968C XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 1 www.anpec.com.tw APM9968C Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM PD TJ TSTG RθJA* Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed TA=25°C Maximum Power Dissipation TA=100°C Parameter (TA = 25°C unless otherwise noted) Rating 20 ±8 6 20 1 W 0.4 150 -55 to 150 80 °C °C °C/W A V Unit Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25°C unless otherwise noted) APM9968C Typ. Max. Min. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V , IDS=250µA VDS=16V , VGS=0V VDS=VGS , IDS=250µA VGS=±8V , VDS=0V VGS=4.5V , IDS=6A VGS=2.5V , IDS=5.2A ISD=0.5A , VGS=0V VDS=10V , IDS= 6A VGS=4.5V , 20 1 0.6 0.7 16 20 0.7 19 2 5 37 68 62 182 100 1 ±10 20 25 1.3 25 V µA V µA mΩ V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time nC VDD=10V , IDS=6A , VGEN=4.5V , RG=6Ω 33 100 54 ns Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 2 www.anpec.com.tw APM9968C Electrical Characteristics Cont. Symbol Ciss Coss Crss Parameter Input Capacitance Output Capacitance (TA = 25°C unless otherwise noted) APM9968C Typ. Max. Min. 1253 340 260 pF Test Condition VGS=0V VDS=15V Unit Reverse Transfer Capacitance Frequency=1.0MHz Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 3 www.anpec.com.tw APM9968C Typical Characteristics Output Characteristics 20 VGS=1.8,2,3,4,5,6,7,8,9,10V Transfer Characteristics 20 ID-Drain Current (A) 12 VGS=1.5V ID-Drain Current (A) 16 16 12 TJ=125°C TJ=25°C TJ=-55°C 8 8 4 VGS=1V 4 0 0 2 4 6 8 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.6 IDS=250uA On-Resistance vs. Drain Current 0.022 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 0.021 0.020 0.019 0.018 0.017 0.016 0.015 0.014 VGS=4.5V VGS=2.5V -25 0 25 50 75 100 125 150 0 4 8 12 16 20 Tj - Junction Temperature (°C) ID - Drain Current (A) Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 4 www.anpec.com.tw APM9968C Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.044 ID=6A On-Resistance vs. Junction Temperature 1.8 VGS=4.5V ID=6A RDS(ON)-On-Resistance (Ω) (Normalized) 0 1 2 3 4 5 6 7 8 RDS(ON)-On-Resistance (Ω) 0.040 0.036 0.032 0.028 0.024 0.020 0.016 0.012 0.008 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Gate Charge 5 2500 V DS =10V ID=6A Capacitance Frequency=1MHz VGS-Gate-Source Voltage (V) 4 2000 3 Capacitance (pF) 1500 Ciss 2 1000 1 500 Coss Crss 0 0 4 8 12 16 20 24 0 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 5 www.anpec.com.tw APM9968C Typical Characteristics Source-Drain Diode Forward Voltage 20 10 60 Single Pulse Power IS-Source Current (A) 48 Power (W) 1.6 36 TJ=150°C TJ=25°C 1 24 12 0.1 0.0 0.4 0.8 1.2 0 0.01 0.1 1 10 100 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A =P DM ZthJA 4.Surface Mounted 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 6 www.anpec.com.tw APM9968C Packaging Information TSSOP-8 e 87 2x E/2 E1 E S ( 2) GAUGE PLANE 12 e/2 D A2 A b A1 0.25 L (L1) ( 3) 1 Dim A A1 A2 b D e E E1 L L1 R R1 S φ1 φ2 φ3 Millimeters Min. 0.00 0.80 0.19 2.9 0.65 BSC 6.40 BSC 4.30 0.45 1.0 REF 0.09 0.09 0.2 0° 0.004 0.004 0.008 0° 4.50 0.75 0.169 0.018 Max. 1.2 0.15 1.05 0.30 3.1 Min. 0.000 0.031 0.007 0.114 Inches Max. 0.047 0.006 0.041 0.012 0.122 0.026 BSC 0.252 BSC 0.177 0.030 0.039REF 12° REF 12° REF 8° 12° REF 12° REF 8° Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 7 www.anpec.com.tw APM9968C Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 8 APM9968C Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 + 0.5 Po T1 12.4 ± 0.2 P1 T2 2 ± 0.2 Ao W 12± 0. 3 Bo 3.6 ± 0.3 P 8± 0.1 Ko E 1.75±0.1 t TSSOP-8 F 5.5 ± 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 1.6 ± 0.1 0.3±0.013 Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 9 www.anpec.com.tw APM9968C Cover Tape Dimensions Application TSSOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 10 www.anpec.com.tw