APM9968COC-TRL

APM9968CO Dual N-Channel Enhancement Mode MOSFET Features • • • • • 20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V RDS(ON)=20mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TSSOP-8 Packages Lead Free Available (RoHS Compliant) Pin Description Top View of TSSOP − 8 (1) D (8) D Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems (4) G1 (5) G2 • Zener Diode Protected Gate Provide Human Body Mode Electrostatic Discharge Protection to 2500 V S1 (2) S1 (3) S2 S2 (6) (7) N-Channel MOSFET Ordering and Marking Information APM 9968C Lead Free Code Handling Code Tem p. Range Package Code Package Code O : TSSO P-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : O riginal Device XXXXX - Date Code APM 9968C O : APM 9968C XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM9968CO Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 (TA = 25°C unless otherwise noted) Rating 20 ±8 6 VGS=4.5V 20 1 150 -55 to 150 TA=25°C TA=100°C 1.25 0.5 100 W °C/W V A A °C Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM9968CO Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=250µA VDS=16V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±8V, VDS=0V VGS=4.5V, IDS=6A VGS=2.5V, IDS=5.2A ISD=0.5A, VGS=0V 20 1 30 0.5 0.7 16 20 0.7 1 ±10 20 25 1.3 V µA V µA mΩ V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge 19 VDS=10V, VGS=4.5V, IDS=6A 2 5 25 nC Gate-Source Charge Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 www.anpec.com.tw APM9968CO Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) APM9968CO Min. Typ. Max. Test Condition Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω 2.5 1250 340 260 37 33 100 54 68 62 182 100 Ω pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM9968CO Typical Characteristics Power Dissipation 1.5 8 Drain Current 1.2 6 0.9 ID - Drain Current (A) Ptot - Power (W) 4 0.6 2 0.3 o o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=4.5V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance Duty = 0.5 0.2 0.1 ID - Drain Current (A) im it Rd s( on )L 10 300µs 1ms 0.1 0.05 0.02 0.01 1 10ms 100ms 0.01 Single Pulse 2 0.1 1s DC 0.01 0.01 TA=25 C 0.1 1 10 100 o 1E-3 1E-4 Mounted on 1in pad o RθJA : 100 C/W 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 4 www.anpec.com.tw APM9968CO Typical Characteristics (Cont.) Output Characteristics 20 VGS= 1.8, 2, 3, 4, 5, 6, 7, 8, 9, 10V 24 16 26 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 22 20 18 16 14 12 VGS=2.5V 12 1.5V 8 VGS=4.5V 4 1V 0 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16 18 20 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 20 1.6 Gate Threshold Voltage IDS =250µA 16 Normalized Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 ID - Drain Current (A) 12 8 Tj=125 C o o Tj=-55 C o 4 Tj=25 C 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 5 www.anpec.com.tw APM9968CO Typical Characteristics (Cont.) Drain-Source On Resistance 2.0 VGS= 4.5V ID = 6A 10 Tj=150 C o Source-Drain Diode Forward 20 Normalized On Resistance 1.6 1.2 IS - Source Current (A) Tj=25 C 1 o 0.8 0.4 RON@Tj=25 C: 16mΩ 0 25 50 75 100 125 150 o 0.0 -50 -25 0.1 0.0 0.4 0.8 1.2 1.6 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 2500 Frequency=1MHz 5 VDS=10V IDS= 6A Gate Charge VGS - Gate - source Voltage (V) 2000 4 C - Capacitance (pF) 1500 Ciss 1000 Crss 3 2 500 Coss 1 0 0 0 4 8 12 16 20 0 4 8 12 16 20 24 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 6 www.anpec.com.tw APM9968CO Packaging Information TSSOP-8 e 87 2x E/2 E1 E S ( 2) GAUGE PLANE 1 2 e/2 D A2 A b A1 0.25 L (L1) ( 3) 1 Dim A A1 A2 b D e E E1 L L1 R R1 S φ1 φ2 φ3 Millimeters Min. 0.00 0.80 0.19 2.9 0.65 BSC 6.40 BSC 4.30 0.45 1.0 REF 0.09 0.09 0.2 0° 0.004 0.004 0.008 0° 4.50 0.75 0.169 0.018 Max. 1.2 0.15 1.05 0.30 3.1 Min. 0.000 0.031 0.007 0.114 Inches Max. 0.047 0.006 0.041 0.012 0.122 0.026 BSC 0.252 BSC 0.177 0.030 0.039REF 12° REF 12° REF 8° 12° REF 12° REF 8° Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 7 www.anpec.com.tw APM9968CO Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP R am p-up tp C ritical Zone T L to T P T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 2 5 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM9968CO Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – P ackage Peak Reflow Tem peratures 3 3 P ackage Thickness Volum e m m Volum e m m < 350 ≥ 350 < 2.5 m m 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 m m 225 +0/-5 ° C 225 +0/-5 ° C T able 2. Pb-free Process – P ackage Classification Reflow Tem peratures 3 3 3 P ackage Thickness Volum e mm Volum e mm Volum e mm < 350 3 50-2000 > 2000 < 1.6 m m 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 m m – 2 .5 m m 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 m m 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device m anufacturer/supplier s hall a ssure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0 ° C. For exam ple 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 9 www.anpec.com.tw APM9968CO Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330 ± 1 B 62 +1.5 D 1.5 + 0.1 C 12.75+ 0.15 D1 1.5 + 0.1 J 2 + 0.5 Po 4.0 ± 0.1 T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 7.0 ± 0.1 W 12± 0. 3 Bo 3.6 ± 0.3 P 8± 0.1 Ko E 1.75±0.1 t TSSOP-8 F 5.5 ± 0. 1 1.6 ± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application T SSOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10 www.anpec.com.tw