APV2002YI-W

APV2002 Crystal Oscillator Features • • • • • • • • • • • • • Single Chip XO Up to 60MHz Square Wave Load Capacitors Build-in Feedback Resistor Build-in 3-State Output High Reliability CMOS/TTL Input Level CMOS/TTL Output Duty Level Fundamental Oscillator Frequency Divider Build-in 2.7V to 5.5V Supply Voltage High Stability Against Noise on VDD General Description The APV2002 is a CMOS IC that integrates all circuit components required for a oscillator. It is a low cost, low jitter, high performance oscillator, which consists of low-current oscillator circuit and output buffer. The IC also incorporates a high-precision, thinfilm feedback resistor and load capacitors with excellent frequency characteristics. It also offers frequency divider for application flexibility choice. Pin Assignment XTB 1 8 XT OE VDD Chip Form and SOP-8 Package Available S0 S1 GND 2 7 APV 2002 3 6 4 5 QO SOP − 8 Ordering Information APV2002 Lead Free Code Handling Code Temp. Range Package Code Package Code K : SOP-8 Y : CHIP FORM Temp. Range I : -40 to 85°C Handling Code TU : Tube TY : Tray TR : Tape & Reel W : Wafer Lead Free Code L : Lead Free Device Blank : Original Device ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.3 - Nov., 2002 1 www.anpec.com.tw APV2002 Pin Description P in 1 2 3 4 5 6 7 8 Sym bol XTB S 0 (N o te 1 ) S1 GND QO VDD O E (N o te 2 ) XT F u n c tio n C ry s ta l d riv e F re q u e n c y s e le c t p in 1 F re q u e n c y s e le c t p in 2 G ro u n d F re q u e n c y o u tp u t Pow er O u tp u t e n a b le C ry s ta l fe e d b a c k N o te 1 : P le a s e re fe r fre q u e n c y s e le c to r N o te 2 : H ig h o r n o c o n n e ctio n : e n a b le , L o w : d is a b le Electrical Characteristics The following specifications apply for VDD = 5V unless otherwise noted. Symbol Parameter Test Condition Min. 4.5 -40 0.5 Crystal 50MHz , CL = 50pF -0.5 -0.5 40 0.5V to 4.5V , CL = 50pF 4.5V to 0.5V , CL = 50pF 50 3 3 APV2002 Typ. 5 Max. 5.5 85 60 20 VDD+0.5V VDD+0.5V 60 Unit Operating condition VDD Supply Voltage Ambient Temperature DC characteristics Freq IDD VIN VOUT Duty Tr Tf Crystal Frequency Operating Current Input Voltage Output Voltage Waveform Symmetry Rise Time Fall Time V °C MHz mA AC characteristics % ns ns Copyright  ANPEC Electronics Corp. Rev. A.3 - Nov., 2002 2 www.anpec.com.tw APV2002 Electrical Characteristics (Cont.) The following specifications apply for VDD = 3.3V unless otherwise noted. Symbol Parameter Test Condition Min. 3.0 -40 0.5 Crystal 55MHz , CL = 50pF -0.5 -0.5 40 0.3V to 3.0V , CL = 50pF 3.0V to 0.3V , CL = 50pF 50 3 3 APV2002 Typ. 3.3 Max. 3.6 85 60 20 VDD+0.5V VDD+0.5V 60 Unit Operating condition VDD Supply Voltage Ambient Temperature DC characteristics Freq IDD VIN VOUT Crystal Frequency Operating Current Input Voltage Output Voltage Waveform Symmetry Rise Time Fall Time V °C MHz mA AC characteristics Duty Tr Tf % ns ns Copyright  ANPEC Electronics Corp. Rev. A.3 - Nov., 2002 3 www.anpec.com.tw APV2002 Pad Layout 1 2 11 10 3 9 4 8 7 5 6 Pad Description Pad # 1 2 3 4 5 6 7 8 9 10 11 Symbol XTB OE S0 S1 GND C/T (Note3) QO NC (Note4) VDD OE XT Description Crystal drive Output enable Frequency select pad1 Frequency select pad2 Ground Duty cycle modulation Frequency output Reserve Power Output enable Crystal feedback Note3 : C/T-no connection or connect to VDD for above 30Meg XO; connect to GND for below 30Meg XO. Note4 : NC-no connection Frequency Selector S1 X X O O S0 X O X O QO Default ¡ 2Ò ¡ 4Ò ¡ 8Ò Note5 : X-no connection , O-connect to GND Note6 : This function for die use only Copyright  ANPEC Electronics Corp. Rev. A.3 - Nov., 2002 4 www.anpec.com.tw APV2002 Pad Position Y 1 2 11 10 3 9 4 8 7 5 6 x (0 ,0 ) Die Size = 716.5um * 821.5um Pad Size = 86um * 86um Die Thickness = 250um Pad # 1 2 3 4 5 6 7 8 9 10 11 Note8 : VDD and GND are double pads. Symbol XTB OEPAD S0PAD S1PAD GND TCBPAD QO NC VDD OEPAD XT Pad Center X(um) 260 78 78 78 225,321 468 638 638 638,638 638 449 Y(um) 743 700 531 359 78,78 78 163 356 457,553 700 743 Note7 : Substrate should be connected to GND. Copyright  ANPEC Electronics Corp. Rev. A.3 - Nov., 2002 5 www.anpec.com.tw APV2002 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 φ1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8° Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8° Copyright  ANPEC Electronics Corp. Rev. A.3 - Nov., 2002 6 www.anpec.com.tw APV2002 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classificatin Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Large Body Small Body Pb-Free Assembly Large Body Small Body 3°C/second max. 150°C 200°C 60-180 seconds 3°C/second max 217°C 60-150 seconds 245 +0/-5°C 250 +0/-5°C 10-30 seconds 20-40 seconds 6°C/second max. 8 minutes max. www.anpec.com.tw Average ramp-up rate 3°C/second max. (TL to TP) Preheat - Temperature Min (Tsmin) 100°C - Temperature Mix (Tsmax) 150°C - Time (min to max)(ts) 60-120 seconds Tsmax to TL - Ramp-up Rate Tsmax to TL - Temperature(TL) 183°C - Time (tL) 60-150 seconds Peak Temperature(Tp) 225 +0/-5°C 240 +0/-5°C Time within 5°C of actual Peak 10-30 seconds 10-30 seconds Temperature(tp) Ramp-down Rate 6°C/second max. 6 minutes max. Time 25°C to Peak Temperature Copyright  ANPEC Electronics Corp. Rev. A.3 - Nov., 2002 7 Note: All temperatures refer to topside of the package. Measured on the body surface. APV2002 Reliability test program Test item S OLDERABILITY H OLT P CT T ST E SD Latch-Up Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B,A102 MIL-STD-883D-1011.9 MIL-STD-883D-3015.7 JESD 78 Description 245 °C, 5 SEC 1000 Hrs Bias @125°C 168 Hrs, 100% RH, 121°C -65 °C~150°C, 200 Cycles VHBM > 2KV, VMM > 200V 10ms, 1tr > 100mA Carrier Tape t P P1 D Po E F W Bo Ao Ko D1 T2 J C A B T1 Application A 330 ± 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 ± 0.5 Po T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 6.4 ± 0.1 W 12± 0. 3 Bo 5.2± 0. 1 P 8± 0.1 Ko E 1.75±0.1 t SOP- 8 F 5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.1± 0.1 0.3±0.013 (mm) Copyright  ANPEC Electronics Corp. Rev. A.3 - Nov., 2002 8 www.anpec.com.tw APV2002 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp. Rev. A.3 - Nov., 2002 9 www.anpec.com.tw