AO3160

AO3160 600V,0.04A N-Channel MOSFET General Description Product Summary The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Top View VDS 700V@150℃ ID (at VGS=10V) 0.04A RDS(ON) (at VGS=10V) < 500Ω RDS(ON) (at VGS=4.5V) < 600Ω SOT23A Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain CurrentA,F B Pulsed Drain Current Peak diode recovery dv/dt TA=25°C Power Dissipation A IDM dv/dt PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Rev1: April 2012 Steady-State Steady-State ±20 V 0.03 A 0.12 5 1.39 V/ns W 0.89 TJ, TSTG Symbol t ≤ 10s Units V 0.04 ID TA=70°C Maximum 600 RθJA RθJL www.aosmd.com -50 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3160 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C 600 - - - 700 - Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=5V, ID=8µA Static Drain-Source On-Resistance Static Drain-Source On-Resistance gFS VSD IS ISM RDS(ON) ID=250µA, VGS=0V - 0.64 VDS=600V, VGS=0V - VDS=480V, TJ=125°C - V o - V/ C - 1 - 10 µA - - ±100 1.4 2 3.2 nΑ V VGS=10V, ID=0.016A - 232 500 Ω VGS=4.5V, ID=0.016A - 315 600 Ω Forward Transconductance VDS=40V, ID=0.016A - 0.024 - S Diode Forward Voltage IS=0.016A,VGS=0V - 0.74 1 V Maximum Body-Diode Continuous Current - - 0.04 A Maximum Body-Diode Pulsed Current - - 0.12 A - 10 15 pF - 1.8 3 pF - 0.7 1 pF 5 10 15 Ω DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg - 1 1.5 nC - 0.1 0.15 nC Gate Drain Charge - 0.52 0.8 nC tD(on) Turn-On DelayTime - 4 12 ns tr Turn-On Rise Time - 5.2 8 ns tD(off) Turn-Off DelayTime - 12.5 19 ns tf trr Turn-Off Fall Time - 55 82.5 ns IF=0.016A,dI/dt=100A/µs,VDS=300V - 105 160 Qrr Body Diode Reverse Recovery Charge IF=0.016A,dI/dt=100A/µs,VDS=300V - 9.5 14.3 ns nC Qgs Gate Source Charge Qgd Body Diode Reverse Recovery Time VGS=10V, VDS=400V, ID=0.01A VGS=10V, VDS=300V, ID=0.01A, RG=6Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using