AO3162

AO3162 600V,0.034A N-Channel MOSFET General Description Product Summary The AO3162 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Top View VDS 700V@150℃ ID (at VGS=10V) 0.034A RDS(ON) (at VGS=10V) < 500Ω SOT23A Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage Continuous Drain CurrentA,F TA=25°C Pulsed Drain Current B Peak diode recovery dv/dt TA=25°C Power Dissipation A IDM dv/dt PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead Rev0: May 2012 C Steady-State Steady-State ±30 V 0.028 A 0.16 5 1.39 V/ns W 0.89 TJ, TSTG Symbol t ≤ 10s Units V 0.034 ID TA=70°C Maximum 600 RθJA RθJL www.aosmd.com -50 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3162 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C 600 - - - 700 - Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=8µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.016A gFS Forward Transconductance VDS=40V, ID=0.016A VSD Diode Forward Voltage IS=0.016A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current - ID=250µA, VGS=0V - 0.69 VDS=600V, VGS=0V - VDS=480V, TJ=125°C - DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=0.01A V o - V/ C - 1 - 10 µA - - ±100 2.8 3.2 4.1 nΑ V - 154 500 Ω - 0.045 - S - 0.74 1 V - - 0.034 A - 0.16 A - 4.2 6 pF - 0.45 0.6 pF - 0.05 0.07 pF 14 28 42 Ω - 0.1 0.15 nC - 0.03 0.05 nC nC Qgs Gate Source Charge Qgd Gate Drain Charge - 0.05 0.08 tD(on) Turn-On DelayTime - 13.8 20 ns tr Turn-On Rise Time - 10 15 ns - 39.2 57 ns - 13 19 ns - 105 160 - 9.5 14.3 ns nC tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=300V, ID=0.01A, RG=6Ω IF=0.016A,dI/dt=100A/µs,VDS=300V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=0.016A,dI/dt=100A/µs,VDS=300V A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using