AO3400A

AO3400A 30V N-Channel MOSFET General Description Product Summary The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V 5.7A RDS(ON) (at VGS=10V) < 26.5mΩ RDS(ON) (at VGS = 4.5V) < 32mΩ RDS(ON) (at VGS = 2.5V) < 48mΩ SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 3: Dec 2011 Steady-State Steady-State A 30 W 0.9 TJ, TSTG Symbol t ≤ 10s V 1.4 PD TA=70°C ±12 4.7 IDM TA=25°C Units V 5.7 ID TA=70°C Maximum 30 RθJA RθJL www.aosmd.com -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3400A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.65 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 100 nA 1.05 1.45 V 18 26.5 28 38 VGS=4.5V, ID=5A 19 32 mΩ VGS=2.5V, ID=3A 24 48 mΩ VGS=10V, ID=5.7A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=5.7A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=4.5V, VDS=15V, ID=5.7A 1.5 mΩ S 1 V 2 A 630 pF 75 pF 50 SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 5 Gate Threshold Voltage Units V 1 IGSS Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ pF 3 4.5 6 7 Ω nC 1.3 nC 1.8 nC 3 ns VGS=10V, VDS=15V, RL=2.6Ω, RGEN=3Ω 2.5 ns 25 ns 4 ns IF=5.7A, dI/dt=100A/µs 8.5 Body Diode Reverse Recovery Charge IF=5.7A, dI/dt=100A/µs 2.6 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using