AO3401A

AO3401A P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. Standard product AO3401A is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V (V GS = -10V) ID = -4.3A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) RDS(ON) < 80mW (V GS = -2.5V) Rg,Ciss,Coss,Crss Tested TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain A,F Current Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG Maximum -30 ±12 -4.3 -3.8 -25 1.4 0.9 -55 to 150 Units V V A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 90 125 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3401A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.3A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.5A gFS VSD IS Forward Transconductance VDS=-5V, ID=-4.3A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.6 -25 36 52 44 62 13 -0.75 -1 -2 933 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 108 81 6 9.3 VGS=-4.5V, VDS=-15V, ID=-4.3A 1.5 3.7 5.2 VGS=-10V, VDS=-15V, RL=3.5Ω, RGEN=6Ω IF=-4.3A, dI/dt=100A/µs 2 Min -30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 ±100 -1 -1.3 44 63 55 80 µA nA V A mΩ mΩ mΩ S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 1200 9 12.2 Ω nC nC nC ns ns ns ns SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 6.8 42 15 21 14.3 28 Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/µs ns nC A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using