AO3401AL_DELTA

AO3401A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Compliant -AO3401AL is Halogen Free VDS (V) = -30V (VGS = -10V) ID = -4.3A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) RDS(ON) < 80mΩ (VGS = -2.5V) TO-236 (SOT-23) Rg,Ciss,Coss,Crss Tested Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain A,F Current TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter AF Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum -30 Units V ±12 V -4.3 ID -3.8 IDM -25 1.4 PD W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 65 85 43 Max 90 125 80 Units °C/W °C/W °C/W AO3401A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 Typ -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=-250µA -0.6 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 VGS=-10V, ID=-4.3A TJ=125°C ±100 nA -1.3 V 36 44 52 63 44 55 mΩ 80 mΩ A Static Drain-Source On-Resistance VGS=-2.5V, ID=-2.5A 62 gFS Forward Transconductance VDS=-5V, ID=-4.3A 13 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge VGS=-4.5V, VDS=-15V, ID=-4.3A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/µs VGS=-10V, VDS=-15V, RL=3.5Ω, RGEN=6Ω -1 V -2 A 1200 pF 108 pF pF 6 9 Ω 9.3 12.2 nC 1.5 nC 3.7 nC 5.2 ns 6.8 ns 42 ns 15 IF=-4.3A, dI/dt=100A/µs mΩ S 81 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs -0.75 933 VGS=0V, VDS=-15V, f=1MHz µA -1 RDS(ON) VGS=-4.5V, ID=-3.5A Units V VDS=-30V, VGS=0V VGS(th) Coss Max 21 ns 28 14.3 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using