AO3404A

AO3404A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3404A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 30V ID = 5.8A RDS(ON) < 25mΩ RDS(ON) < 35mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) SOT23 Top View Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A,F VGS TA=25°C TA=70°C TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Lead C Rev.5.0: June 2015 ±20 V ID 4.9 IDM 64 W 0.9 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 1.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 5.8 Pulsed Drain Current B Power Dissipation Maximum 30 RθJA RθJL www.aosmd.com Typ 65 85 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 4 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 64 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=5.8A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C Gate resistance 2.1 100 nA 2.6 V A 18.4 25 26.2 36 24.5 35 mΩ mΩ 22 0.75 DYNAMIC PARAMETERS Ciss Input Capacitance Rg µA 5 VGS=4.5V, ID=4.8A Output Capacitance V TJ=55°C VGS=10V, ID=5.8A Reverse Transfer Capacitance Units 1 Zero Gate Voltage Drain Current Crss Max 30 VDS=30V, VGS=0V IDSS Coss Typ 373 VGS=0V, VDS=15V, f=1MHz S 1 V 2.5 A 448 pF 67 pF 41 pF 1.8 2.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 7.1 11 nC Qg(4.5V) Total Gate Charge 3.3 nC 1.4 nC 1.7 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=5.8A 0.9 4.5 6.5 ns VGS=10V, VDS=15V, RL=2.6Ω, RGEN=3Ω 2.4 ns 14.8 ns IF=5.8A, di/dt=100A/µs 10.5 Body Diode Reverse Recovery Charge IF=5.8A, di/dt=100A/µs 4.5 Body Diode Reverse Recovery Time 2.5 ns 12.6 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using