AO3406

AO3406 30V N-Channel MOSFET General Description Product Summary The AO3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V 3.6A RDS(ON) (at VGS=10V) < 50mΩ RDS(ON) (at VGS =4.5V) < 70mΩ SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 7: Jan. 2011 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V 15 PD TA=70°C ±20 2.9 IDM TA=25°C Power Dissipation B Units V 3.6 ID TA=70°C Maximum 30 RθJA RθJL www.aosmd.com °C -55 to 150 Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 15 ±100 nA 2 2.5 V 36 50 57 80 VGS=4.5V, ID=2.8A 48 70 mΩ 11 1 V 1.5 A VGS=10V, ID=3.6A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=3.6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance A 0.79 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ 170 VGS=0V, VDS=15V, f=1MHz mΩ S 210 35 pF pF 23 pF 3.5 5.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 5 nC Qg(4.5V) Total Gate Charge 2 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.6A 1.7 0.55 nC 1 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3.6A, dI/dt=100A/µs 7.5 Qrr Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/µs 2.5 VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 4.5 ns 1.5 ns 18.5 ns 15.5 ns 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using