AO3406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250PA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250PA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
15
TJ=55°C
VGS=10V, ID=3.6A
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
A
75
105
VDS=5V, ID=3.6A
7
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
V
VGS=4.5V, ID=2.8A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
Rg
3
100
Forward Transconductance
Crss
nA
74
TJ=125°C
VSD
Output Capacitance
1.9
0.79
288
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=3.6A
PA
100
65
gFS
Coss
5
50
Static Drain-Source On-Resistance
Units
V
VDS=24V, VGS=0V
Zero Gate Voltage Drain Current
IS
Max
30
IDSS
RDS(ON)
Typ
m:
m:
S
1
V
2.5
A
375
pF
57
pF
39
pF
3
6
:
6.5
8.5
nC
3.1
4
nC
1.2
nC
1.6
nC
4.6
ns
VGS=10V, VDS=15V, RL=2.2:,
RGEN=3:
1.9
ns
20.1
ns
IF=3.6A, dI/dt=100A/Ps
10.2
2.6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/Ps
ns
14
3.5
ns
nC
A: The value of R TJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R TJA is the sum of the thermal impedence from junction to lead RTJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 Ps pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 5 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha and Omega Semiconductor, Ltd.
AO3406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
10V
4.5V
8
12
6V
VDS=5V
4V
6
ID(A)
ID (A)
9
3.5V
4
6
125°C
VGS=3V
3
2
0
25°C
0
0
1
2
3
4
5
1.5
2
100
3
3.5
4
4.5
5
Normalized On-Resistance
1.8
90
RDS(ON) (m:)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=4.5V
80
70
60
50
VGS=10V
40
ID=3.6A
1.6
VGS=4.5V
VGS=10V
1.4
1.2
1
0.8
0
2
4
6
8
10
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
200
ID=3.6A
1.0E+00
125°
150
100
IS (A)
RDS(ON) (m:)
1.0E-01
125°C
1.0E-02
25°
1.0E-03
50
25 C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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