AO3413

June 2003 AO3413 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -3 A RDS(ON) < 97mΩ (VGS = -4.5V) RDS(ON) < 130mΩ (VGS = -2.5V) RDS(ON) < 190mΩ (VGS = -1.8V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -3 -2.4 -15 1.4 0.9 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3A TJ=125°C VGS=-2.5V, ID=-2.6A VGS=-1.8V, ID=-1A VDS=-5V, ID=-3A -0.3 -15 -0.55 81 111 108 4 146 7 -0.78 Min -20 -1 -5 ±100 -1 97 135 130 190 -1 -2 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC Static Drain-Source On-Resistance gFS VSD IS Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 540 72 49 12 6.1 0.6 1.6 10 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-4.5V, VDS=-10V, ID=-3A VGS=-4.5V, VDS=-10V, RL=3.3Ω, RGEN=3Ω 12 44 22 21 7.5 IF=-3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO3413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 -4.5V -3.0V -8V 10 -ID (A) -ID(A) -2.0V 4 -2.5V 6 VDS=-5V 5 VGS=-1.5V 2 125°C 25°C 0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 0 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 0.5 2 200 VGS=-1.8V RDS(ON) (mΩ ) 150 VGS=-2.5V 100 Normalized On-Resistance 1.8 VGS=-2.5V 1.6 1.4 1.2 1 0.8 0 2 4 6 0 25 50 75 100 125 150 175 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 ID=-4A VGS=-1.8V VGS=-4.5V VGS=-4.5V 50 200 150 RDS(ON) (mΩ ) -IS (A) 1E-01 1E-02 1E-03 1E-04 1E-05 125°C 25°C 125°C 100 25°C 50 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO3413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-3A Capacitance (pF) 800 600 Ciss 400 200 Crss Coss 0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150°C TA=25°C -ID (Amps) 10.0 RDS(ON) limited 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1ms 0.1s 10ms 100µs 10µs Power (W) 20 TJ(Max)=150°C TA=25°C 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Zθ JA Normalized Transient Thermal Resistance D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.01 0.00001 PD Ton T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. SOT-23 Package Data SYMBOLS DIMENSIONS IN MILLIMETERS θ A A1 A2 b C D E E1 e e1 L θ1 MIN 1.00 0.00 1.00 0.35 0.10 2.80 2.60 1.40 −−− −−− 0.40 1° NOM −−− −−− 1.10 0.40 0.15 2.90 2.80 1.60 0.95 BSC 1.90 BSC −−− 5° MAX 1.25 0.10 1.15 0.50 0.25 3.04 2.95 1.80 −−− −−− 0.60 8° PACKAGE MARKING DESCRIPTION SEATING PLANE NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE GAUGE PLANE RECOMMENDATION OF LAND PATTERN SOT-23 PART NO. CODE PNDLN PART NO. AO3411 CODE AB NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE. Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SOT-23 Tape and Reel Data SOT-23 Carrier Tape SOT-23 Reel SOT-23 Tape Leader / Trailer & Orientation