AO3414

AO3414 20V N-Channel MOSFET General Description Features The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. VDS = 20V ID = 3A RDS(ON) < 62mΩ RDS(ON) < 70mΩ RDS(ON) < 85mΩ SOT23 Top View (VGS = 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead C Rev 7: July 2010 ±8 V ID 2.5 IDM 16 W 0.9 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 1.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 3 TA=70°C A Maximum 20 RθJA RθJL www.aosmd.com Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3414 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 16 TJ=55°C 0.7 62 85 VGS=2.5V, ID=2.8A 58 70 mΩ 85 mΩ VGS=1.8V, ID=2.5A 68 Forward Transconductance VDS=5V, ID=3A 11 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance 260 VGS=0V, VDS=10V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time mΩ S 1 V 2 A 320 pF 48 pF 27 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs V 51 gFS Rg 1 68 TJ=125°C Static Drain-Source On-Resistance Output Capacitance nA A RDS(ON) Reverse Transfer Capacitance µA 5 100 VGS=4.5V, ID=3A Coss Units 20 VDS=20V, VGS=0V IDSS Crss Max VGS=4.5V, VDS=10V, ID=3A VGS=5V, VDS=10V, RL=3.3Ω, RGEN=6Ω pF 3 4.5 Ω 2.9 3.8 nC 0.4 nC 0.6 nC 2.5 ns 3.2 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 21 ns 3 ns Body Diode Reverse Recovery Time IF=3A, dI/dt=100A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs 3.8 19 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using