AO3415A

AO3415A 20V P-Channel MOSFET General Description Product Summary The AO3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. VDS -20V ID (at VGS=-4.5V) -5A RDS(ON) (at VGS= -4.5V) < 41mΩ RDS(ON) (at VGS= -2.5V) < 53mΩ RDS(ON) (at VGS= -1.8V) < 65mΩ ESD protected SOT23 Top View Bottom View D D D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev. 3.0 June 2013 Steady-State Steady-State A 1.5 W 1 TJ, TSTG Symbol t ≤ 10s V -30 PD TA=70°C ±8 -4 IDM TA=25°C Power Dissipation B Units V -5 ID TA=70°C Maximum -20 RθJA RθJL www.aosmd.com -55 to 150 Typ 65 85 43 °C Max 80 100 52 Units °C/W °C/W °C/W Page 1 of 5 AO3415A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 Typ Max Units V VDS=-20V, VGS=0V -1 TJ=55°C -5 µA ±10 µA -0.57 -0.9 V 34 41 49 59 VGS=-2.5V, ID=-4A 42 53 VGS=-1.8V, ID=-2A 52 65 VGS=-1.5V, ID=-1A 61 mΩ Forward Transconductance VDS=-5V, ID=-4A 20 S VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current IGSS Gate-Body leakage current VDS=0V, VGS= ±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µΑ -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -30 VGS=-4.5V, ID=-4A TJ=125°C RDS(ON) gFS Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-4.5V, VDS=-10V, ID=-4A A -0.64 mΩ mΩ mΩ -1 V -2 A 600 751 905 pF 80 115 150 pF 48 80 115 pF 6 13 20 Ω 7.4 9.3 11 nC 0.8 1 1.2 nC 1.3 2.2 3.1 nC VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω 13 ns 9 ns 19 ns 29 ns trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=500A/µs 20 26 32 Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=500A/µs 40 51 62 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using