AO3416

AO3416 20V N-Channel MOSFET General Description Product Summary The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. VDS 20V 6.5A ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) < 22mΩ RDS(ON) (at VGS = 2.5V) < 26mΩ RDS(ON) (at VGS = 1.8V) < 34mΩ ESD protected SOT23 Top View D Bottom View D D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 5: July 2010 Steady-State Steady-State A 30 W 0.9 TJ, TSTG Symbol t ≤ 10s V 1.4 PD TA=70°C ±8 5.2 IDM TA=25°C Units V 6.5 ID TA=70°C Maximum 20 RθJA RθJL www.aosmd.com -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3416 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±8V VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 ±10 1.1 16 22 22 30 VGS=2.5V, ID=5.5A 18 26 mΩ VGS=1.8V, ID=5A 21 34 mΩ 50 1 V 2 A 1650 pF TJ=125°C gFS Forward Transconductance VDS=5V, ID=6.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge A 0.62 1295 VGS=0V, VDS=10V, f=1MHz mΩ S 160 pF 87 pF VGS=0V, VDS=0V, f=1MHz 1.8 KΩ 10 nC VGS=4.5V, VDS=10V, ID=6.5A 4.2 nC 2.6 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA V 0.7 VGS=4.5V, ID=6.5A Coss µA 5 Gate Threshold Voltage Units V 1 VGS(th) Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IGSS RDS(ON) Typ tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6.5A, dI/dt=100A/µs 31 Qrr Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs 6.8 VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω 280 ns 328 ns 3.76 us 2.24 us 41 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using