AO3418

AO3418 30V N-Channel MOSFET General Description Product Summary The AO3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V 3.8A RDS(ON) (at VGS=10V) < 55mΩ RDS(ON) (at VGS =4.5V) < 65mΩ RDS(ON) (at VGS =2.5V) < 85mΩ SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 8: Jan. 2011 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V 15 PD TA=70°C ±12 3.1 IDM TA=25°C B Units V 3.8 ID TA=70°C C Maximum 30 RθJA RθJL www.aosmd.com -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3418 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C µA 5 Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 15 Units V 1 VGS(th) ±100 nA 1 1.5 V 43 55 70 84 VGS=4.5V, ID=3.5A 47 65 mΩ VGS=2.5V, ID=1A 59 85 mΩ 14 1 V 1.5 A VGS=10V, ID=3.8A Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ TJ=125°C gFS Forward Transconductance VDS=5V, ID=3.8A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance A 0.75 mΩ S 185 235 285 pF 25 35 45 pF 10 18 25 pF 2.1 4.3 6.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 12 Qg(4.5V) Total Gate Charge 4.7 nC 0.95 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.8A nC Qgd Gate Drain Charge 1.6 nC tD(on) Turn-On DelayTime 3.5 ns tr Turn-On Rise Time 1.5 ns 17.5 ns 2.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=15V, RL=3.95Ω, RGEN=3Ω IF=3.8A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs 8.5 11 2.6 3.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using