AO3421E

AO3421E 30V P-Channel MOSFET General Description Product Summary The AO3421E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) -30V -3A RDS(ON) (at VGS=-10V) < 95mΩ RDS(ON) (at VGS=-4.5V) < 160mΩ Typical ESD protection HBM Class 2 VDS SOT23 Top View D Bottom View D D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: April 2012 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V -18 PD TA=70°C ±20 -2 IDM TA=25°C Power Dissipation B Units V -3 ID TA=70°C Maximum -30 RθJA RθJL www.aosmd.com -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3421E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±16V VGS(th) Gate Threshold Voltage VDS=VGS，ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -18 VGS=-10V, ID=-3A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-2A gFS Forward Transconductance VDS=-5V, ID=-3A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max VGS=0V, VDS=-15V, f=1MHz Units V VDS=-30V, VGS=0V IGSS RDS(ON) Typ µA ±10 µA -2 -2.5 V 78 95 112 135 120 160 mΩ -1 V -1.5 A A 6 -0.8 mΩ S 215 pF 46.5 pF 27.5 pF 9.5 19 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.6 8 nC Qg(4.5V) Total Gate Charge 2.2 4 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-3A VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω 0.85 nC 1.2 nC 8 ns 4 ns 13.5 ns tf Turn-Off Fall Time 4 ns trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=500A/µs 9 Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=500A/µs 16 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using