AO3421L

AO3421 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3421/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AO3421 and AO3421L are electrically identical. -RoHS Compliant -AO3421L is Halogen Free VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130mΩ (VGS = -10V) RDS(ON) < 200mΩ (VGS = -4.5V) D TO-236 (SOT-23) Top View G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V -20 1.4 W 1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -2.2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -2.6 TA=25°C Power Dissipation A Maximum -30 RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W AO3421 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V -5 VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -5 RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2.6A TJ=125°C VGS=-4.5V, I D=-2A Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-2.5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10) Total Gate Charge(10V) Qg(4.5) Total Gate Charge(4.5V) Qgs Gate Source Charge Units V TJ=55°C gFS Max -1 VDS=-24V, VGS=0V IDSS IS Typ 3 -1.9 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-2.6A ±100 nA -3 V A 97 130 135 150 166 200 3.8 -0.82 302 VGS=0V, VDS=-15V, f=1MHz µA mΩ mΩ S -1 V -2 A 370 pF 50.3 pF 37.8 pF 12 18 Ω 6.8 9 nC 2.4 nC 1.6 nC Qgd Gate Drain Charge 0.95 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=5.8Ω, RGEN=3Ω 3.2 ns 17 ns IF=-2.6A, dI/dt=100A/µs 16.8 6.8 trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-2.6A, dI/dt=100A/µs ns 22 10 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using