AO3423

AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO3423 is Pb-free (meets ROHS & Sony 259 specifications). AO3423L is a Green Product ordering option. AO3423 and AO3423L are electrically identical. Features VDS (V) = -20V (V GS = -10V) ID = -2 A RDS(ON) < 92mΩ (VGS = -10V) RDS(ON) < 118mΩ (VGS = -4.5V) RDS(ON) < 166mΩ (VGS = -2.5V) ESD Rating: 2000V HBM TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25°C F Maximum -20 ±12 -2 -2 -8 1.4 0.9 -55 to 150 Units V V A TA=70°CF ID IDM PD TJ, TSTG W °C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3423 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-2A -1 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.7 -8 76 90 94 128 6.8 -0.78 -1.8 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 77 62 9.2 5.5 VGS=-4.5V, VDS=-10V, ID=-2A 0.8 1.9 5 VGS=-10V, VDS=-10V, RL=5Ω, RGEN=3Ω IF=-2A, dI/dt=100A/ µs 6.7 28 13.5 9.8 2.7 12 13 6.6 620 92 108 118 166 -0.9 Min -20 -0.5 -2.5 ±1 ±10 -1.4 Typ Max Units V µΑ µA µA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/ µs 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The maximum current rating is limited by bond-wires. Rev 0 : Mar 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 12 9 6 3 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 180 Normalized On-Resistance 160 140 RDS(ON) (mΩ) 120 100 80 60 40 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 RDS(ON) (mΩ) -IS (A) 140 120 100 80 60 1E-06 40 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C ID=-2A 1E+01 1E+00 125°C 1E-01 1E-02 1E-03 1E-04 1E-05 25°C VGS=-10V VGS=-4.5V VGS=-2.5V 1.6 ID=-2A, VGS=-4.5V 1.4 ID=-2A, VGS=-10V -2.0V VGS=-1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 -VGS(Volts) Figure 2: Transfer Characteristics -2.5V -10.0V -8.0V -6.0V -3.0V -ID (A) 6 -ID(A) 4 2 125°C 10 -4.0V -3.5V 8 VDS=-5V 25°C 1.2 ID=-1A, VGS=-2.5V 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. AO3423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics ID=-2A Capacitance (pF) 600 800 Ciss 400 200 Crss 0 0 Coss 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 10.0 RDS(ON) limited -ID (Amps) 10µs 100µs 1ms 1.0 10ms 1s TJ(Max)=150°C TA=25°C 40 TJ(Max)=150°C TA=25°C 30 Power (W) 20 10 10s DC 0.1s 0 0.001 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd.