AO3434

AO3434 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO3434 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 4.2A RDS(ON) < 52mΩ RDS(ON) < 75mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) ESD Protected TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A,F Pulsed Drain Current Power Dissipation B Symbol 10 sec VDS VGS 4.2 ID IDM PD TJ, TSTG 3.3 Maximum Steady-State 30 ±20 3.5 2.8 30 1.0 0.64 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C 1.4 0.9 W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3434 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±16V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=4.2A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=4.2A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1 30 43 58 59 8.5 0.77 1 1.8 269 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 65 41 1 5.7 VGS=10V, VDS=15V, ID=4.2A 3 1.37 0.65 2.6 VGS=10V, VDS=15V, RL=3.6Ω, RGEN=3Ω IF=4.2A, dI/dt=100A/µs 2 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 10 1.32 1.8 52 74 75 µA uA V A mΩ mΩ S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 340 1.5 7.2 Ω nC nC nC nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 3.8 8 23 5.5 21 ns ns ns ns ns nC 5.5 15.2 3.7 15.5 7.1 Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using