AO3435

AO3435 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3435/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.5V. This device is suitable for use in buck convertor applications. AO3435 and AO3435L are electrically identical. -RoHS Compliant -AO3435L is Halogen Free Features VDS = -20V ID = -3.5A RDS(ON) < 70mΩ RDS(ON) < 90mΩ RDS(ON) < 110mΩ RDS(ON) < 130mΩ (VGS = -4.5V) (VGS =- 4.5V) (VGS = -2.5V) (VGS = -1.8V) (VGS = -1.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Steady State -20 ±8 -2.9 -2.3 -25 1 0.6 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG -3.5 -2.7 1.4 0.9 -55 to 150 W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3435 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.5A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-3.0A VGS=-1.8V, ID=-2.0A VGS=-1.5V, ID=-0.5A gFS VSD IS Forward Transconductance VDS=-5V, ID=-3.5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.5 -25 56 80 70 85 100 15 -0.7 -1 -1.4 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 80 70 15 8.5 VGS=-4.5V, VDS=-10V, ID=-3.5A 1.2 2.1 7.2 VGS=-4.5V, VDS=-10V, RL=3Ω, RGEN=6Ω IF=-3.5A, dI/dt=100A/ µs 36 53 56 37 27 49 23 11 745 70 100 90 110 130 -0.65 Min -20 -1 -5 ±100 -1 Typ Max Units V µA nA V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/ µs A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA 12 curve provides a single pulse rating. Rev0 : April 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -4.5V 20 15 -2.0V 10 5 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 150 130 RDS(ON) (mΩ) 110 90 VGS=-2.5V 70 VGS=-4.5V 50 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 180 160 140 RDS(ON) (mΩ) -IS (A) 120 100 80 60 40 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C ID=-3.5A 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 1E+02 Normalized On-Resistance VGS=-1.5V 1.6 VGS=2.5V VGS=-4.5V ID=-3.5A VGS=-1.5V ID=-0.5A 1 VGS=-1.5V 5 125°C 25°C 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics -3.0V -2.5V 15 -ID(A) 20 VDS=-5V -ID (A) 10 1.4 VGS=-1.8V 1.2 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 12 125°C 25°C Alpha & Omega Semiconductor, Ltd. AO3435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-3.5A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 0 Crss 5 10 15 20 Coss Ciss -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 RDS(ON) limited 10µs 1000 TJ(Max)=150°C TA=25°C 10.00 100 Power (W) -ID (Amps) 100µ 1ms 10ms 0.1s 1.00 10 0.10 TJ(Max)=150°C TA=25°C 0.01 0.1 1 10 DC 1s 1 100 0.1 0.00001 0.001 0.1 10 1000 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Ton T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd.