AO3460

AO3460 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3460/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. AO3460 and AO3460L are electrically identical. -RoHS Compliant -AO3460L is Halogen Free Features VDS (V) = 60V ID = 0.65A (VGS = 10V) RDS(ON) < 1.7Ω (VGS = 10V) RDS(ON) < 2Ω (VGS = 4.5V) D1 TO-236 (SOT-23) Top View G D S S1 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 Continuous Drain Current A, F Pulsed Drain Current Power Dissipation A TA=25°C TA=70°C B Units V V A 0.65 ID IDM PD 0.5 1.6 1.4 0.9 -55 to 150 W °C TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3460 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250uA VGS=10V, VDS=5V VGS=10V, ID=0.65A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=0.5A Forward Transconductance VDS=5V, ID=0.65A Diode Forward Voltage IS=0.1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1 1.6 1.4 2.5 1.6 0.8 0.8 1 1.2 22 VGS=0V, VDS=30V, f=1MHz 6 2 5.3 VGS=10V, VDS=30V, RL=75Ω, RGEN=3Ω IF=0.65A, dI/dt=100A/µs, VGS=-9V 2.8 19.7 5.5 11.3 7.5 14 27 1.7 3 2 2.2 Min 60 1 5 ±10 2.5 Typ Max Units V µA µA V A Ω Ω S V A pF pF pF ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) tf trr Qrr Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=0.65A, dI/dt=100A/µs, VGS=-9V A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using