AO3481C

AO3481C 30V P-Channel MOSFET General Description Product Summary • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant ID (at VGS=-10V) -30V -4.3A RDS(ON) (at VGS=-10V) < 45mΩ RDS(ON) (at VGS=-4.5V) < 65mΩ Typical ESD protection HBM Class 1C VDS Applications • This device is ideal for Load Switch Top View SOT23-3 Bottom View D D D G S G S S G Orderable Part Number Package Type Form Minimum Order Quantity AO3481C SOT23-3 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.2.0: November 2019 Steady-State Steady-State A 1.3 W 0.8 TJ, TSTG Symbol t ≤ 10s V -30 PD TA=70°C ±20 -3.3 IDM TA=25°C B Units V -4.3 ID TA=70°C Maximum -30 RqJA RqJL -55 to 150 Typ 70 100 63 www.aosmd.com °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3481C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -30 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=-250mA -1 TJ=55°C ±10 μA -1.7 -2.2 V 37 45 52 64 65 RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3.5A 52 gFS Forward Transconductance VDS=-5V, ID=-4.3A 13 VSD Diode Forward Voltage IS=-1A, VGS=0V 0.8 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=-10V, VDS=-15V, ID=-4.3A μA -5 -1.2 VGS=-10V, ID=-4.3A Coss Units V VDS=-30V, VGS=0V IDSS Max mΩ mΩ S 1 V 2 A 720 pF 80 pF 70 pF 15 25 Ω 12.5 23 nC 6 12 nC 1.6 nC Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 8.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=-10V, VDS=-15V, RL=3.488W, RGEN=3W 5 ns 39 ns 14.5 ns IF=-4.3A, di/dt=500A/ms 10 Body Diode Reverse Recovery Charge IF=-4.3A, di/dt=500A/ms 13 ns nC Body Diode Reverse Recovery Time A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to -4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1E-05 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=125°C/W 0.1 PDM 0.01 0.001 1E-05 Single Pulse Ton 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: November 2019 www.aosmd.com Page 4 of 5 AO3481C Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd + DUT Qgs Vds Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs VDC td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC BVDSS Vdd + Rg Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.2.0: November 2019 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5 Document No. ALPHA & OMEGA SEMICONDUCTOR Version A Title AO3481C Marking Description SOT-23 PACKAGE MARKING DESCRIPTION Green product NOTE: P - Package and product type N - Last digital of product number W - Week code A - Assembly location code L&T - Assembly lot code PART NO. DESCRIPTION CODE (PN) AO3481C Green product N7 PD-03454 AOS Semiconductor Product Reliability Report AO3481C, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com Oct, 2019 1 This AOS product reliability report summarizes the qualification result for AO3481C. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO3481C passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. I. Reliability Stress Test Summary and Results Test Item Total Sample Size Number of Failures Reference Standard 462 pcs 0 JESD22-A108 462 pcs 0 JESD22-A108 - 4620 pcs 0 JESD22-A113 96 hours 693 pcs 0 JESD22-A110 1000 hours 693 pcs 0 JESD22-A101 96 hours 924 pcs 0 JESD22-A102 1000cycles 924 pcs 0 JESD22-A104 1000 hours 693 pcs 0 15000 cycles 693 pcs 0 JESD22-A103 MIL-STD-750 Method 1037 Test Condition Time Point 168 / 500 / 1000 hours 168 / 500 / 1000 hours Temperature Cycle HTSL Temp = 150°C , Vgs=100% of Vgsmax Temp = 150°C , Vds=100% of Vdsmax 168hr 85°C / 85%RH + 3 cycle reflow@260°C (MSL 1) 130°C , 85%RH, 33.3 psia, Vds = 80% of Vdsmax 85°C , 85%RH, Vds = 80% of Vdsmax 121°C , 29.7psia, RH=100% -65°C to 150°C , air to air, Temp = 150°C IOL Tj = 100°C HTGB HTRB Precondition (Note A) HAST H3TRB Autoclave Note: The reliability data presents total of available generic data up to the published date. Note A: MSL (Moisture Sensitivity Level) 1 based on J-STD-020 II. Reliability Evaluation FIT rate (per billion): 3.82 MTTF = 29919 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 3.82 9 MTTF = 10 / FIT = 29919 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 2