AO4202L

AO4202L 30V N-Channel MOSFET General Description Product Summary The AO4202L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode. VDS ID (at VGS=10V) 30V 19A RDS(ON) (at VGS=10V) < 5.3mΩ RDS(ON) (at VGS = 4.5V) < 7mΩ 100% UIS Tested 100% Rg Tested D SOIC-8 D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C C Units V ±20 V 19 ID TA=70°C Maximum 30 15 A IDM 130 Avalanche Current C IAS, IAR 38 A Avalanche energy L=0.1mH C EAS, EAR 72 mJ TA=25°C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 1 : Dec 2009 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com °C -55 to 150 Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4402L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 130 VGS=10V, ID=19A TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=19A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=19A, dI/dt=500A/µs nA 2.3 V 4.4 5.3 A mΩ 7 mΩ 1 V 4 A 65 0.7 S 1450 1840 2200 pF 500 720 940 pF 38 63 110 pF 0.3 0.7 1.1 Ω 23 29 35 nC 10 13 16 nC 3 4.2 5 nC 2.5 4.2 6 nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=19A, dI/dt=500A/µs 100 5.5 VDS=5V, ID=19A µA 1.8 6.5 VGS=4.5V, ID=15A Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VGS(th) ID(ON) RDS(ON) Typ 6.5 ns 7 ns 21 ns 3.5 ns 12 15 18 25 32 38 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using