AO4202_120

AO4202 30V N-Channel MOSFET General Description Product Summary The AO4202 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode. VDS 30V 19A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 5.3mΩ RDS(ON) (at VGS = 4.5V) < 7mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±20 V 19 ID TA=70°C Maximum 30 15 A Pulsed Drain Current C IDM 130 Avalanche Current C IAS, IAR 38 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 72 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2 : Nov 2010 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4202 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ Max 30 V VDS=30V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 130 TJ=55°C µA 5 VDS=0V, VGS= ±20V 100 VGS=10V, ID=19A 1.8 4.4 Static Drain-Source On-Resistance VGS=4.5V, ID=15A 5.5 gFS Forward Transconductance VDS=5V, ID=19A 65 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance 2.3 nA V A RDS(ON) TJ=125°C Units 5.3 6.5 7 mΩ mΩ S 1 V 4 A 2200 pF 1450 1840 500 720 940 pF 38 63 110 pF 0.3 0.7 1.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 23 29 35 nC Qg(4.5V) Total Gate Charge 10 13 16 nC 3 4.2 5 nC 4.2 6 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=19A 2.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=19A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=19A, dI/dt=500A/µs 6.5 ns 7 ns 21 ns 3.5 ns 12 15 18 25 32 38 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using