AO4302

AO4302 30V N-Channel MOSFET 30 General Description Product Summary The AO4302 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) 36 VDS 30V 23A RDS(ON) (at VGS=10V) < 4mΩ RDS(ON) (at VGS = 4.5V) < 5mΩ ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V 23 ID TA=70°C Maximum 30 18 A 316 IDM Avalanche Current C IAS, IAR 49 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 120 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: February 2011 3.6 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 27 52 11 °C Max 35 65 15 Units °C/W °C/W °C/W Page 1 of 6 AO4302 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V Units V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 316 TJ=55°C µA 5 ±10 1.8 2.3 3.2 4.0 4.8 6.0 VGS=4.5V, ID=18A 3.9 5.0 mΩ 1 V 5 A VGS=10V, ID=20A RDS(ON) Max Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 120 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance V mΩ S 2310 2891 3470 pF 330 474 620 pF 150 256 360 pF 0.7 1.6 2.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 41 51.9 63 nC Qg(4.5V) Total Gate Charge 19 24.8 30 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A nC 10.9 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 11 13.8 17 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 24 30.8 37 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω nC 7.5 7.0 ns 4.8 ns 41.5 ns 8.8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using