AO4306

AO4306 30V N-Channel MOSFET General Description Product Summary The AO4306 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V) VDS 30V 13A RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS = 4.5V) < 15.5mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±20 V 13 ID TA=70°C Maximum 30 10.4 A IDM 100 Avalanche Current C IAS 22 A Avalanche energy L=0.1mH C TA=25°C EAS 24 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: October 2014 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 100 VGS=10V, ID=12A TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=12A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 1.9 2.5 V 9.5 11.5 14 17 12.5 15.5 mΩ 1 V 4 A A 45 0.75 DYNAMIC PARAMETERS Ciss Input Capacitance Coss µA 5 VGS(th) VGS=0V, VDS=15V, f=1MHz 0.8 mΩ S 760 pF 125 pF 70 VGS=0V, VDS=0V, f=1MHz Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ 1.6 pF 2.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14 25 nC Qg(4.5V) Total Gate Charge 6.6 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, ID=12A VGS=4.5V, VDS=15V, ID=12A VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω 2.4 nC 3 nC 2.4 nC 3 nC 4.4 ns 9 ns 17 ns 6 ns IF=12A, dI/dt=500A/µs 7 Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 8 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using