AO4402

AO4402 20V N-Channel MOSFET General Description Product Summary The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=4.5V) VDS 20V 20A RDS(ON) (at VGS=4.5V) < 5.5mΩ RDS(ON) (at VGS=2.5V) < 7mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±12 V 20 ID TA=70°C Maximum 20 16 IDM A 140 Avalanche Current C IAS, IAR 57 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 162 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 1: Nov 2010 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4402 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 140 100 nA 1 1.6 V 4.6 5.5 5.8 7 VGS=2.5V, ID=18A 5.5 7 mΩ 1 V 4 A VGS=4.5V, ID=20A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 105 VSD Diode Forward Voltage IS=1A,VGS=0V 0.6 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=10V, ID=20A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Qrr µA 5 Gate Threshold Voltage Units V 1 IGSS Coss Max 20 VDS=20V, VGS=0V VGS(th) RDS(ON) Typ mΩ S 3080 3860 4630 pF 520 740 960 pF 350 580 810 pF 0.6 1.4 2.1 Ω 28 36 43 nC 7 9 11 nC 7 12 17 nC VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 7 ns 8 ns 70 ns 18 ns 13 17 20 29 36 43 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.Maximum avalanche current limited by tester capability. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using