AO4402G

AO4402G 20V N-Channel MOSFET General Description Product Summary • Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant ID (at VGS=4.5V) 20V 20A RDS(ON) (at VGS=4.5V) < 5.9mΩ RDS(ON) (at VGS=2.5V) < 7.3mΩ VDS Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Battery protection switch SOIC-8 Top View D D D Top View Bottom View D D G S S S 1 8 D 2 7 3 6 D D G 4 5 D G S S S S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AO4402G SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH TA=25°C Power Dissipation B TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: August 2017 Steady-State Steady-State V A IDM 80 IAS 40 A EAS 80 mJ 3.1 W 2.0 TJ, TSTG Symbol t ≤ 10s ±12 15 PD Junction and Storage Temperature Range Units V 20 ID TA=70°C Maximum 20 RqJA RqJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4402G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250mA V 1 TJ=55°C 0.45 ±100 nA 0.85 1.25 V 4.9 5.9 6.3 7.6 7.3 RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=18A 5.8 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.6 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=4.5V, VDS=10V, ID=20A μA 5 VGS=4.5V, ID=20A Coss Units 20 VDS=20V, VGS=0V IDSS Max 1.2 mΩ mΩ S 1 V 5 A 3300 pF 485 pF 370 pF 2.4 3.6 Ω 31 45 nC 5.2 nC Gate Drain Charge 8 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time 15 ns tD(off) Turn-Off DelayTime 72 ns tf trr Turn-Off Fall Time 21 ns IF=20A, di/dt=500A/ms 17 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 30 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=10V, RL=0.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 1 1E-05 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=75°C/W 0.1 PDM 0.01 0.001 1E-05 Single Pulse Ton 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2017 www.aosmd.com Page 4 of 5 AO4402G Figure A:Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) Test Unclamped Inductive TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: August 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5