AO4403L

AO4403 30V P-Channel MOSFET General Description Product Summary The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -6A RDS(ON) (at VGS=-10V) < 48mΩ VDS RDS(ON) (at VGS =-4.5V) < 57mΩ RDS(ON) (at VGS =-2.5V) < 80mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D Bottom View D D D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±12 V -6 ID TA=70°C Maximum -30 A -5 Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 18 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 16 mJ Power Dissipation B Junction and Storage Temperature Range Rev 7: Mar. 2011 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead -30 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4403 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 Typ -1 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -30 TJ=55°C ±100 nA -0.9 -1.3 V 40 48 60 72 VGS=-4.5V, ID=-4A 45 57 mΩ 80 mΩ TJ=125°C A RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-2A 60 gFS Forward Transconductance VDS=-5V, ID=-6A 19 VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 645 VGS=0V, VDS=-15V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr mΩ S -1 V -3.5 A 780 pF 80 pF 55 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs µA -5 VGS=-10V, ID=-6A Crss Units V VDS=-30V, VGS=0V IDSS Coss Max VGS=-4.5V, VDS=-15V, ID=-6A 4 7.8 pF Ω 12 7 nC 1.5 nC 2.5 nC 6.5 ns VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=6Ω 3.5 ns 41 ns 9 ns IF=-6A, dI/dt=100A/µs 11 Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 3.5 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using