AO4405E

AO4405E 30V P-Channel MOSFET General Description Product Summary VDS -30V ID (at VGS=-10V) -6A RDS(ON) (at VGS=-10V) < 45mΩ RDS(ON) (at VGS=-4.5V) < 80mΩ Applications Typical ESD protection HBM Class 1C • This device is suitable for use as a load switch or in PWM applications. 100% UIS Tested 100% Rg Tested • Trench Power LV (P-ch) MOSFET technology • Low RDS(ON) • Low Gate Charge • ESD protected • RoHS and Halogen-Free Compliant SOIC-8 Top View D D Top View Bottom View D D D G 1 8 2 7 3 6 4 5 G PIN1 S S S S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AO4405E SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage ±20 V -6 ID TA=70°C Pulsed Drain Current C Avalanche Current Units V VGS TA=25°C Continuous Drain Current Maximum -30 C A -4.7 IDM -24 IAS, IAR 15 A Avalanche energy L=0.1mH C EAS, EAR 11 mJ VDS Spike VSPIKE -36 V 10µs TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.2.0: August 2016 2.5 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL www.aosmd.com W 1.6 -55 to 150 Typ 42 70 20 Max 50 85 30 °C Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=-250µA -5 ±10 µA V 29 45 40 65 VGS=-4.5V, ID=-4A 50 80 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-6A 14 VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA -1.5 Static Drain-Source On-Resistance Output Capacitance Units -2 -2.5 VGS=-10V, ID=-6A Coss Max V VDS=-30V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz mΩ S -1 V -3 A 495 pF 100 pF 56 pF 7.5 11.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8.8 16 nC Qg(4.5V) Total Gate Charge 4.2 8 nC Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=500A/µs f=1MHz VGS=-10V, VDS=-15V, ID=-6A 3.5 mΩ Ω 1.8 nC Gate Drain Charge 2.0 nC Turn-On DelayTime 9 ns 4.5 ns 15.5 ns VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=3Ω IF=-6A, dI/dt=500A/µs 4.5 ns 9 ns nC 13.5 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to -4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=85°C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: August 2016 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgs Vds + VDC Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.2.0: August 2016 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5