AO4406

AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4406/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4406 and AO4406L are electrically identical. -RoHS Compliant -AO4406L is Halogen Free VDS (V) = 30V ID = 11.5A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain AF Current Pulsed Drain Current ID B B Repetitive Avalanche Energy L=0.3mH TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF A Maximum Junction-to-Ambient Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Units V ±12 V 11.5 TA=70°C Avalanche Current B Power Dissipation Maximum 30 A 9.6 IDM 80 IAV 25 A EAV 94 mJ 3 PD TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 2.1 RθJA RθJL Typ 23 48 12 °C Max 40 65 16 Units °C/W °C/W °C/W www.aosmd.com AO4406 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.8 ID(ON) On state drain current VGS=4.5V, VDS=5V 60 TJ=55°C 100 19.2 VGS=4.5V, ID=10A 13.5 16.5 mΩ VGS=2.5V, ID=8A 19.5 26 mΩ 1 V 4.5 A 2300 pF 142 200 pF 0.8 1.8 Ω 18 24 VDS=5V, ID=10A Diode Forward Voltage IS=10A,VGS=0V IS Maximum Body-Diode Continuous Current 25 1630 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge S 201 0.4 13.5 VGS=4.5V, VDS=15V, ID=11.5A mΩ 38 0.83 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V A 16 TJ=125°C Forward Transconductance Rg 1.5 14 gFS Output Capacitance 1 nA 11.5 VSD Reverse Transfer Capacitance µA 5 VGS=10V, ID=12A Coss V 1 IGSS Crss Units 30 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max VDS=30V, VGS=0V IDSS RDS(ON) Typ pF 2.5 nC nC Qgd Gate Drain Charge 5.5 tD(on) Turn-On DelayTime 4 6 ns tr Turn-On Rise Time 5 7.5 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω nC 32 50 ns 5 10 ns IF=10A, dI/dt=100A/µs 18.7 24 Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 12.5 15 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using